APT40GR120B

APT40GR120B_S
052-6400 Rev A 3-2012
TYPICAL PERFORMANCE CURVES
1
10
100
20 30 40 50 60 70 80
10
100
1000
10 20 30 40 50 60 70 80 90
100
1000
10000
0 25 50 75 100 125
700
1000
5000
0 10 20 30 40 50
100
1000
10000
10 20 30 40 50 60 70 80
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C or 125°C
T
d(on)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Turn-On Time vs Collector Current
SWITCHING TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-Off Time vs Collector Current
SWITCHING TIME (ns)
R
G
, GATE RESISTANCE ()
FIGURE 14, Energy Loss vs Gate Resistance
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Energy Loss vs Collector Current
SWITCHING ENERGY LOSS (J)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
T
r
T
d(off)
T
f
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C
T
J
= 125°C
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C
T
J
= 125°C
E
on2
E
off
E
on2
E
off
V
CE
= 600V, V
GE
=15V, I
C
= 40A
T
J
= 125°C
SWITCHING ENERGY LOSS (J)
E
off
E
on2
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
I
C
= 40A
1.0E11
1.0E10
1.0E9
1.0E8
0 10 20 30 40 50
C
oes
C
res
C
ies
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 9, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (pF)
0.1
1
10
100
300
1 10 100 1000 2000
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 16, Minimum Switching Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
APT30DQ120
I
C
A
D.U.T.
V
CE
V
CC
FIGURE 10, Inductive Switching Test Circuit
1ms
100ms
100s
10ms
052-6400 Rev A 3-2012
APT40GR120B_S
TYPICAL PERFORMANCE CURVES
0
0.05
0.10
0.15
0.20
0.25
0.30
10
-4
10
-3
10
-2
0.1 1 10
Z
JC
, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 17, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak T
J
= P
DM
x Z
θJC
+T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches )
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs. }
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead )
Collector
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
e3 SAC: 100% Sn Plating
TO-247 Package Outline
D
3
PAK Package Outline
e3 SAC: 100% Sn Plating

APT40GR120B

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT, 1200V, 40A, TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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