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FDMS8660AS

P1-P3P4-P6P7-P8
FDMS8660AS N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
4
©2009 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C
1
Figure 7.
0 102030405060
0
2
4
6
8
10
I
D
= 28A
V
DD
= 15V
V
DD
= 10V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
10000
30
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 100 1000
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
AS
, AVALANCHE CURRENT(A)
40
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
30
60
90
120
150
180
R
TJC
= 1.2
o
C/W
V
GS
= 10V
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
Limited by Package
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fi g u r e 11 . F o rw ard B i as S a f e
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
300
1ms
DC
10s
1s
100ms
10ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
TJA
= 125
o
C/W
T
A
= 25
o
C
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
10000
SINGLE PULSE
R
TJA
= 125
o
C/W
T
A
= 25
o
C
0.5
V
GS
= 10V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics T
J
= 25°C unless otherwise noted
FDMS8660AS N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
5
©2009 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C
1
Figure 13. Transient Thermal Response Curve
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0001
0.001
0.01
0.1
1
SINGLE PULSE
R
TJA
= 125
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z
TJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
TJA
x R
TJA
+ T
A
Typical Characteristics T
J
= 25°C unless otherwise noted
FDMS8660AS N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
6
©2009 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C
1
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8660AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0 5 10 15 20 25 30
0.00001
0.0001
0.001
0.01
0.1
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
DSS
, REVERSE LEAKAGE CURRENT (A)
V
DS
, REVERSE VOLTAGE (V)
Typical Characteristics (continued)
Figure 14. FDMS8660AS SyncFET Body Diode
Reverse Recovery Characteristics
Figure 15. SyncFET Body Diode Reverse Leakage
vs Drain to Source Voltage
-20 0 20 40 60 80 100 120
-4
-3
-2
-1
0
1
2
3
4
5
CURRENT (A)
TIME (ns)
P1-P3P4-P6P7-P8

FDMS8660AS

Mfr. #:
Buy FDMS8660AS
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Channel PowerTrench
Lifecycle:
New from this manufacturer.
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