SIR618DP-T1-GE3 Datasheet SIR618DP-T1-GE3 | P1-P3

SiR618DP

www.vishay.com

Vishay Siliconix

S16-0999-Rev. A, 23-May-16

1

Document Number: 67747

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 200 V (D-S) MOSFET

Ordering Information:

SiR618DP-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

• ThunderFET

®

technology optimizes balance

of R

DS(on)

, Q

g

, Q

sw

, and Q

oss

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•Fixed telecom

•DC/DC converter

• Primary and secondary side switch

• Battery management

Notes

a. T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() MAX. I

D

(A)

a

Q

g

(TYP.)

200

0.095 at V

GS

= 10 V 14.2

10.6 nC

0.099 at V

GS

= 7.5 V 13.9

PowerPAK

®

SO-8 Single

Top View

1

6.15 mm

5.15 mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

200

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

14.2

A

T

C

= 70 °C 11.3

T

A

= 25 °C 4.6

b, c

T

A

= 70 °C 3.7

b, c

Pulsed Drain Current (t = 100 μs) I

DM

30

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

14

T

A

= 25 °C 2.9

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

10

Single Pulse Avalanche Energy E

AS

5mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

48

W

T

C

= 70 °C 30.7

T

A

= 25 °C 5

b, c

T

A

= 70 °C 3.2

b, c

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Soldering Recommendations (Peak temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum Junction-to-Ambient

b, f

t  10 s R

thJA

20 25

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

22.6

SiR618DP

www.vishay.com

Vishay Siliconix

S16-0999-Rev. A, 23-May-16

2

Document Number: 67747

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 200 - - V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= 250 μA

- 175 -

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

--6.6-

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2 - 4 V

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 200 V, V

GS

= 0 V - - 1

μA

V

DS

= 200 V, V

GS

= 0 V, T

J

= 70 °C - - 10

On-State Drain Current

a

I

D(on)

V

DS

 5 V, V

GS

= 10 V 10 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 8 A - 0.076 0.095



V

GS

= 7.5 V, I

D

= 8 A - 0.079 0.099

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 8 A - 18 - S

Dynamic

b

Input Capacitance C

iss

V

DS

= 100 V, V

GS

= 0 V, f = 1 MHz

- 740 -

pFOutput Capacitance C

oss

-65-

Reverse Transfer Capacitance C

rss

-7-

Total Gate Charge Q

g

V

DS

= 100 V, V

GS

= 10 V, I

D

= 8 A - 14.2 21.5

nCV

DS

= 100 V, V

GS

= 7.5 V, I

D

= 8 A

-10.616

Gate-Source Charge Q

gs

-3.8-

Gate-Drain Charge Q

gd

-3.4-

Output Charge Q

oss

V

DS

= 100 V, V

GS

= 0 V - 21.5 33

Gate Resistance R

g

f = 1 MHz 0.5 1.1 2.0 

Turn-On Delay Time t

d(on)

V

DD

= 100 V, R

L

= 12.5 

I

D

 8 A, V

GEN

= 10 V, R

g

= 1 

-816

ns

Rise Time t

r

-1734

Turn-Off Delay Time t

d(off)

-1428

Fall Time t

f

-816

Turn-On Delay Time t

d(on)

V

DD

= 100 V, R

L

= 12.5 

I

D

 8 A, V

GEN

= 7.5 V, R

g

= 1 

-1122

Rise Time t

r

-4180

Turn-Off Delay Time t

d(off)

-1122

Fall Time t

f

-1836

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C - - 14

A

Pulse Diode Forward Current (t = 100 μs) I

SM

--30

Body Diode Voltage V

SD

I

S

= 5 A - 0.84 1.1 V

Body Diode Reverse Recovery Time t

rr

I

F

= 5 A, dI/dt = 100 A/μs, T

J

= 25 °C

- 102 204 ns

Body Diode Reverse Recovery Charge Q

rr

- 281 562 nC

Reverse Recovery Fall Time t

a

-44-

ns

Reverse Recovery Rise Time t

b

-58-

SiR618DP

www.vishay.com

Vishay Siliconix

S16-0999-Rev. A, 23-May-16

3

Document Number: 67747

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

10

20

30

40

50

03691215

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 7 V

V

GS

= 6 V

V

GS

= 4 V

V

GS

= 5 V

10

100

1000

10000

0

0.04

0.08

0.12

0.16

0.2

0 8 16 24 32 40 48

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 7.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

03691215

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 150 V

V

DS

= 50 V

V

DS

= 100 V

I

D

= 8 A

10

100

1000

10000

0

7

14

21

28

35

0246810

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

250

500

750

1000

1250

0 20406080100

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.5

1.0

1.5

2.0

2.5

-50-25 0 255075100125150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

I

D

= 8 A

V

GS

= 10 V

V

GS

= 7.5 V

SIR618DP-T1-GE3

SIR618DP-T1-GE3

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