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TSD10H120CW MNG

P1-P3P4-P5
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Halogen-free according to IEC 61249-2-21
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
V
RRM
V
dV/dt V/μs
TYP MAX TYP MAX TYP MAX TYP MAX
I
F
= 5A T
J
= 25°C
0.62 0.70 0.69 0.79 0.78 0.88 0.81 0.91
I
F
= 5A T
J
= 125°C
0.55 0.63 0.58 0.66 0.64 0.72 0.67 0.75
T
J
= 25°C
- 100 - 100 - 100 - 100 μA
T
J
= 125°C
- 15 - 15 1.5 10 1.5 10 mA
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D0000002 Version: A15
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Instantaneous reverse current per
diode at rated reverse voltage
I
FSM
A
V
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Operating junction temperature range
- 55 to +150
- 55 to +150
Instantaneous forward
voltage per diode (Note1)
Polarity: As marked
Trench Schottky barrier rectifier is designed for high frequency
switched mode power supplies such as adapters, lighting, and
DC/DC converters.
Weight: 1.6 g (approximately)
100
per device
I
F(AV)
per diode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
PARAMETER SYMBOL
Voltage rate of change (Rated V
R
)
TSD10H100CW - TSD10H200CW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifier
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-263AB
(
D
2
PAK
)
TYPICAL APPLICATIONS
MECHANICAL DATA
Case: TO-263AB (D
2
PAK)
Typical thermal resistance per diode
I
R
Maximum repetitive peak reverse voltage 150
Storage temperature range
UNIT
Maximum average forward
rectified current
A
TSD10H
150CW
V
F
3.2
TSD10H
200CW
200
5
10
100
10000
120
TSD10H
100CW
TSD10H
120CW
Document Number: DS_D0000002 Version: A15
PACKING
CODE
G
TSD10H150CW C0G TSD10H150CW C0 G Green compound
Note 1: "XXX" defines voltage from 100V (TSD10H100CW) to 200V (TSD10H200CW)
EXAMPLE
PREFERRED
PART NO.
PART NO.
TSD10H100CW - TSD10H200CW
Taiwan Semiconductor
(T
A
= 25°C unless otherwise noted)
RATINGS AND CHARACTERISTICS CURVES
PACKING CODE
SUFFIX
DESCRIPTION
PART NO. PACKING CODE
PACKING CODE
SUFFIX
ORDERING INFORMATION
D
2
PAK
50 / Tube
PACKAGE PACKING
TSD10HXXXCW
(Note 1)
C0
0
2
4
6
8
10
12
0 25 50 75 100 125 150
FIG. 1 FORWARD CURRENT DERATING CURVE
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
CASE TEMPERATURE (
o
C)
AVERAGE FORWARD CURRENT (A)
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
TSD10H100CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
TSD10H120CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
TSD10H150CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
Document Number: DS_D0000002 Version: A15
TSD10H100CW - TSD10H200CW
Taiwan Semiconductor
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
TSD10H120CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
TSD10H150CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
TSD10H100CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT
(mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
10
100
1000
10000
0.1 1 10 100
FIG. 10 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
TSD10H120CW
TSD10H150CW
TSD10H100CW
TSD10H200CW
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
TSD10H200CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
TSD10H200CW
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
P1-P3P4-P5

TSD10H120CW MNG

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Manufacturer:
Taiwan Semiconductor
Description:
TSD10H120CW MNG
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New from this manufacturer.
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