SFF2001G - SFF2008G
CREAT BY ART
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
t
rr
ns
C
J
pF
R
θJC
°C/W
T
J
°C
T
STG
°C
Version: H1511
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Taiwan Semiconductor
20A, 50V - 600V Isolated Glass Passivated Su
er Fast Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
UNIT
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL
SFF
2001
G
MECHANICAL DATA
Case: ITO-220AB
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.82 g (approximately)
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 20
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Maximum instantaneous forward voltage (Note 1)
@ 10 A
V
F
0.975 1.3 1.7 V
Maximum reverse current @ rated V
R
T
J
=25°C
I
R
10
μA
T
J
=125°C
400
- 55 to +150
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Maximum reverse recovery time (Note 2) 35
Typical junction capacitance (Note 3)
Typical thermal resistance 2.5
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
SFF
2002
G
SFF
2003
G
SFF
2004
G
SFF
2005
G
SFF
2006
G
SFF
2007
G
SFF
2008
G
90
Operating junction temperature range