SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
*R
DS(on)
=5Ω
* 60 Volt V
DS
COMPLEMENTARY TYPE - ZVP3306F
PARTMARKING DETAIL - MC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T
amb
=25°C I
D
150 mA
Pulsed Drain Current I
DM
3A
Gate-Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8 2.4 V I
D
=1mA, V
DS
=V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
0.5
50
µA
µA
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
750 mA V
DS
=18V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
5
Ω
V
GS
=10V, I
D
=500mA
Forward Transconductance
(1)(2)
g
fs
150 mS V
DS
=18V, I
D
=500mA
Input Capacitance (2) C
iss
35 pF
Common Source
Output Capacitance (2)
C
oss
25 pF V
DS
=18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
8pF
Turn-On Delay Time (2)(3) t
d(on)
3typ 5 ns
V
DD
≈18V, I
D
=500mA
Rise Time (2)(3) t
r
4typ 7 ns
Turn-Off Delay Time (2)(3) t
d(off)
4typ 6 ns
Fall Time (2)(3) t
f
5typ 8 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN3306F
D
G
S
SOT23
3 - 393
