74LVC00ADR2G

74LVC00A
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4
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
−405C to +855C −405C to +1255C
Unit
Min
Typ
(Note 3)
Max Min
Typ
(Note 3)
Max
VIH HIGH−level input
voltage
V
CC
= 1.2 V 1.08 1.08
V
V
CC
= 1.65 V to 1.95 V 0.65 x
V
CC
0.65 x
V
CC
V
CC
= 2.3 V to 2.7 V 1.7 1.7
V
CC
= 2.7 V to 3.6 V 2.0 2.0
V
IL
LOW−level input
voltage
V
CC
= 1.2 V 0.12 0.12
V
V
CC
= 1.65 V to 1.95 V 0.35 x
V
CC
0.35 x
V
CC
V
CC
= 2.3 V to 2.7 V 0.7 0.7
V
CC
= 2.7 V to 3.6 V 0.8 0.8
V
OH
HIGH−level output
voltage
V
I
= V
IH
or V
IL
V
I
O
= −100 mA;
V
CC
= 1.65 V to 3.6 V
V
CC
0.2
V
CC
0.3
I
O
= −4 mA; V
CC
= 1.65 V 1.2 1.05
I
O
= −8 mA; V
CC
= 2.3 V 1.8 1.65
I
O
= −12 mA; V
CC
= 2.7 V 2.2 2.05
I
O
= −18 mA; V
CC
= 3.0 V 2.4 2.25
I
O
= −24 mA; V
CC
= 3.0 V 2.2 2.0
VOL LOW−level output
voltage
V
I
= V
IH
or V
IL
V
I
O
= 100 mA;
V
CC
= 1.65 V to 3.6 V
0.2 0.3
I
O
= 4 mA; V
CC
= 1.65 V 0.45 0.65
I
O
= 8 mA; V
CC
= 2.3 V 0.6 0.8
I
O
= 12 mA; V
CC
= 2.7 V 0.4 0.6
I
O
= −24 mA; V
CC
= 3.0 V 0.55 0.8
I
I
Input leakage current V
I
= 5.5V or GND V
CC
= 3.6 V ±0.1 ±5 ±0.1 ±20
mA
I
OFF
Power−off leakage
current
V
I
or V
O
= 5.5 V; V
CC
= 0.0 V ±0.1 ±10 ±0.1 ±20
mA
I
CC
Supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 3.6 V
0.1 10 0.1 40
mA
DI
CC
Additional supply
current
per input pin;
V
I
= V
CC
− 0.6 V; I
O
= 0 A;
V
CC
= 2.7 V to 3.6 V
5 500 5 5000
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. All typical values are measured at T
A
= 25°C and V
CC
= 3.3 V, unless stated otherwise.
74LVC00A
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5
AC ELECTRICAL CHARACTERISTICS (t
R
= t
F
= 2.5 ns)
Symbol
Parameter Conditions
−405C to +855C −405C to +1255C
Unit
Min Typ
1
Max Min Typ
1
Max
t
pd
Propagation Delay (Note 5)
V
CC
= 1.2 V 12.0 ns
V
CC
= 1.65 V to 1.95 V 0.5 3.8 8.4 0.5 9.7
ns
V
CC
= 2.3 V to 2.7 V 0.5 2.2 4.8 0.5 5.7
V
CC
= 2.7 V 0.5 2.3 5.1 0.5 5.9
V
CC
= 3.0 V to 3.6 V 0.5 2.0 4.3 0.5 5.1
t
sk(0)
Output Skew Time (Note 6) V
CC
= 3.0 V to 3.6 V 1.0 1.5 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Typical values are measured at T
A = 25°C and VCC = 3.3 V, unless stated otherwise.
5. t
pd
is the same as t
PLH
and t
PHL
.
6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t
OSHL
) or LOW−to−HIGH (t
OSLH
); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
Symbo
l
Characteristic Condition
T
A
= +25°C
Unit
Min Typ Max
V
OLP
Dynamic LOW Peak Voltage (Note 7) V
CC
= 3.3 V, C
L
= 50 pF, V
IH
= 3.3 V, V
IL
= 0 V
V
CC
= 2.5 V, C
L
= 30 pF, V
IH
= 2.5 V, V
IL
= 0 V
0.8
0.6
V
V
OLV
Dynamic LOW Valley Voltage (Note 7) V
CC
= 3.3 V, C
L
= 50 pF, V
IH
= 3.3 V, V
IL
= 0 V
V
CC
= 2.5 V, C
L
= 30 pF, V
IH
= 2.5 V, V
IL
= 0 V
−0.8
−0.6
V
7. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol Parameter Condition Typical Unit
CIN Input Capacitance
V
CC
= 3.3 V, V
I
= 0 V or V
CC
4.0 pF
COUT Output Capacitance
V
CC
= 3.3 V, V
I
= 0 V or V
CC
5.0 pF
C
PD
Power Dissipation Capacitance
(Note 8)
Per input; V
I
= GND or V
CC
pF
V
CC
= 1.65 V to 1.95 V 5.6
V
CC
= 2.3 V to 2.7 V 8.9
V
CC
= 3.0 V to 3.6 V 11.8
8. C
PD
is used to determine the dynamic power dissipation (P
D
in mW).
P
D
= C
PD
x V
CC
2
x fi x N + S (C
L
x V
CC
2
x fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
C
L
= output load capacitance in pF V
CC
= supply voltage in Volts
N = number of outputs switching
S(C
L
x V
CC
2
x fo) = sum of the outputs.
74LVC00A
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6
WAVEFORM 1 − PROPAGATION DELAYS
t
R
= t
F
= 2.5 ns, 10% to 90%; f = 1 MHz; t
W
= 500 ns
V
CC
0 V
V
OH
V
OL
An, Bn
On
t
PLH
t
PHL
Vmi
Vmo
Vmo
Vmi
Vcc
Symbol 3.3 V + 0.3 V 2.7 V V
CC
< 2.7 V
Vmi 1.5 V 1.5 V Vcc/2
Vmo 1.5 V 1.5 V Vcc/2
Figure 3. AC Waveforms
PULSE
GENERATOR
R
T
DUT
V
CC
R
L
C
L
C
L
includes jig and probe capacitance
R
T
= Z
OUT
of pulse generator (typically 50 W)
V
I
V
O
Supply Voltage Input Load
V
CC
(V) V
I
t
r
, t
f
C
L
R
L
1.2 V
CC
2 ns 30 pF
1 kW
1.65 − 1.95 V
CC
2 ns 30 pF
1 kW
2.3 − 2.7 V
CC
2 ns 30 pF
500 W
2.7 2.7 V 2.5 ns 50 pF
500 W
3 − 3.6 2.7 V 2.5 ns 50 pF
500 W
Figure 4. Test Circuit
ORDERING INFORMATION
Device Package Shipping
74LVC00ADR2G SOIC−14 NB
(Pb−Free)
2500 / Tape & Reel
74LVC00ADTR2G TSSOP−14
(Pb−Free)
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

74LVC00ADR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Logic Gates QUAD 2-INPUT NAND GA
Lifecycle:
New from this manufacturer.
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