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BAS16P2T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 1
1 Publication Order Number:
BAS16P2/D
BAS16P2T5G
Switching Diode
The BAS16P2T5G Switching Diode is a spin−off of our popular
SOT−23 three−leaded device. It is designed for switching applications
and is housed in the SOD−923 surface mount package. This device is
ideal for low−power surface mount applications, where board space is
at a premium.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
100 Vdc
Peak Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Power Dissipation @
T
A
= 25°C
R
q
JA
P
D
520
240
°C/W
mW
Thermal Resistance,
Junction−to−Ambient (Note 2)
Total Power Dissipation @
T
A
= 25°C
R
q
JA
P
D
175
710
°C/W
mW
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single
sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06″ thick single
sided. Operating to steady state.
Device Package Shipping
†
ORDERING INFORMATION
BAS16P2T5G SOD−923
(Pb−Free)
8000 / Tape & Reel
1
CATHODE
2
ANODE
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD−923
CASE 514AA
PLASTIC
A6 = Specific Device Code
M = Month Code
MARKING
DIAGRAM
A6M
1
2
12
BAS16P2T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 75 Vdc)
(V
R
= 100 Vdc)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
I
R
−
−
−
−
1.0
100
50
30
mAdc
Reverse Breakdown Voltage
(I
BR
= 100 mAdc)
V
(BR)
100 − Vdc
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mV
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 2.0 pF
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
V
FR
− 1.75 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50 W)
t
rr
− 6.0 ns
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0 Vdc,
R
L
= 500 W)
Q
S
− 45 pC
BAS16P2T5G
http://onsemi.com
3
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
T
A
= -40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
P1-P3P4-P4

BAS16P2T5G

Mfr. #:
Buy BAS16P2T5G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SWITCHING DIODE SOD923
Lifecycle:
New from this manufacturer.
Delivery:
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