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SI1058X-T1-E3

P1-P3P4-P6P7-P8
Vishay Siliconix
Si1058X
Document Number: 73894
S12-1618-Rev. E, 09-Jul-12
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical question, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
0.1
1
V
SD
)A( tnerruC ecruoS -I
S
- Source-to-Drain Voltage (V)
0.01
10
0.8
0.6
0.4
0.2
0 1
T = 150 °C
J
T = 25 °C
J
0.4
0.7
1.0
1.3
1.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
)ht(
S
G
(V)
R
DS(on)
vs. V
GS
vs. Temperature
Single Pulse Power
0.04
0.08
0.12
0.16
0.20
012345
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω) ecnatsiseR-nO -
T
A
= 25 °C
T
A
= 125 °C
I
D
= 1.3 A
0
3.0
5.0
1.0
2.0
)W
(
rewo
P
Time (s)
4.0
1000
100
101
0.1
0.01
Safe Operating Area, Junction-to-Ambient
Vishay Siliconix
Si1058X
Document Number: 73894
S12-1618-Rev. E, 09-Jul-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical question, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73894
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
10
-1
100
Square Wave Pulse Duration (s)
10
1000
1
0.1
0.01
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1
10
-4
0.2
0.1
0.05
Duty Cycle = 0.5
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 540 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Notes:
t
1
P
DM
t
2
NOTES:
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash or
protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
6
4
32
4
32
5
4
Caaa
C
M
ccc
A–B D
2X
e
B 6X b
Caaa
2X
D
E/2
E
Cbbb
2X
123
654
E1
E1/2
A
D
e1
L1
L
A
B
C
A1
A1
SECTION B-B
DETAIL “A”
SEE DETAIL “A”
4
3
2
5
6
Package Information
Vishay Siliconix
Document Number: 71612
25-Jun-01
www.vishay.com
1
SC89: 6Ć LEADS (SOTĆ563F)
MILLIMETERS
Tolerances
Dim Min Max
Note Symbol
Of Form And
Position
A
0.56 0.60 aaa 0.10
A1
0.00 0.10 bbb 0.10
b
0.15 0.30 ccc 0.10
c
0.10 0.18
D
1.50 1.70 2, 3
E
1.55 1.70
E1
1.20 BSC 2, 3
e
0.50 BSC
e1
1.00 BSC
L
0.35 BSC
L1
0.20 BSC
ECN: E-00499—Rev. B, 02-Jul-01
DWG: 5880
P1-P3P4-P6P7-P8

SI1058X-T1-E3

Mfr. #:
Buy SI1058X-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI1062X-T1-GE3
Lifecycle:
New from this manufacturer.
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