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TEFD4300F

P1-P3P4-P5
TEFD4300F
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 29-Nov-11
1
Document Number: 83472
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
TEFD4300F is a silicon PIN photodiode with high radiant
sensitivity in black, T-1 plastic package with daylight
blocking filter. Filter bandwitdth is matched with 850 nm to
950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High radiant sensitivity
• Daylight blocking filter matched with 850 nm to
950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Package matched with IR emitter series VSLB3940,
TSUS4300, and TSAL4400
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector for data transmission
• Optical switches
• Counters and sorters
• Interrupters
•Encoders
• Position sensors
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.5
(nm)
TEFD4300F 17 ± 20 770 to 1070
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEFD4300F Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 3 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
450 K/W
TEFD4300F
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 29-Nov-11
2
Document Number: 83472
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1V
Breakdown voltage I
R
= 100 A, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
0.15 3 nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
3.3 pF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
1.2 pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
OC
350 mV
Temperature coefficient of V
O
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
15 A
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current E
e
= 1 mW/cm
2
, λ = 950 nm, V
R
= 5 V I
ra
91727A
Angle of half sensitivity ϕ ± 20 deg
Wavelength of peak sensitivity λ
p
950 nm
Range of spectral bandwidth λ
0.5
770 1070 nm
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
100 ns
10
-12
10
-6
0 20 40 60 80 100
T
amb
- Ambient Temperature (°C)
I
r0
- Reverse Dark Current (A)
10
-7
10
-8
10
-9
10
-10
V
R
= 10 V
10
-11
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
TEFD4300F
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 29-Nov-11
3
Document Number: 83472
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
Fig. 7 - Dark Current vs. Reverse Voltage
0.01
100
1 10 100 1000 10 000
E
e
- Irradiance (µW/cm
2
)
I
ra
- Reverse Light Current (µA)
10
1
0.1
t
p
= 100 µs, V
R
= 5 V, λ = 950 nm
0
3.5
0.01 0.1 1 10 100
V
R
- Reverse Voltage (V)
C
p
- Capacitance (pF)
3.0
1.0
0.5
f = 1 MHz, E = 0
2.5
2.0
1.5
0
1.0
500 600 700 1100
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.9
0.2
0.1
0.8
0.4
0.3
0.5
0.7
0.6
800 900 1000
0
1.0
- 90 - 60 - 30 0 90
ϕ - Angular Displacement (°)
S
rel
- Relative Sensitivity
0.9
0.2
0.1
0.8
0.4
0.3
0.5
0.7
0.6
30 60
10
-12
10
-6
0 5 10 15 20
V
R
- Reverse Voltage (V)
I
r0
- Reverse Dark Current (A)
10
-7
10
-8
10
-9
10
-10
100 °C
10
-11
75 °C
50 °C
25 °C
0 °C
P1-P3P4-P5

TEFD4300F

Mfr. #:
Buy TEFD4300F
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes 60V 215mW 20Deg PIN Photodiode
Lifecycle:
New from this manufacturer.
Delivery:
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