2SA1955FV
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955FV
General Purpose Amplifier Applications
Switching and Muting Switch Application
• Low saturation voltage: V
CE (sat)
(1) = −15 mV (typ.)
@I
C
= −10 mA/I
B
= −0.5 mA
• Large collector current: I
C
= −400 mA (max)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−15 V
Collector-emitter voltage V
CEO
−12 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−400 mA
Base current I
B
−50 mA
Collector power dissipation P
C
150 * mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-1L1A
Weight: 1.5 mg (typ.)
1.BASE
2.EMITTER
3.COLLECTOR
VESM
1.2±0.05
0.32±0.05
1
2
3
0.4 0.4
0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
0.5mm
0.45mm
0.45mm
0.4mm
