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DSF01S30SC(TPL3)
P1-P3
P4-P5
SANKEN ELECTR
IC CO., LTD.
RL4A
0311
10
1
/
5
61426-
01
1.
Scope
The present specificatio
ns shall apply to
an RL4
A.
2.
Outline
T
ype
Silicon Diode
Structure
Resin Molded
Applications
High Frequency
Rectification
3.
Flammability
UL94V
-0(Equivalent)
SANKEN ELECTR
IC CO., LTD.
RL4A
0311
10
2
/
5
61426-
01
4.
Absolute maximum ratin
gs
N
o
.
Item
Symbol
Unit
Rating
Co
nditions
1
T
ransient P
eak Reverse V
oltage
V
RSM
V
600
2
Peak Reverse
V
oltage
V
RM
V
600
3
A
verage Forward Current
I
F(A
V)
A
3.0
Refer to Derating of 7
4
Peak Surge Forw
ard Current
I
FSM
A
80
10msec.
Half sinewave, one shot
5
I
2
t Limiting
V
alue
I
2
t
A
2
s
32
1msec
≤
t
≤
10
msec
6
Junction T
em
perature
T
j
°C
-
40
~
+150
7
Storage T
emperature
T
stg
°C
-
40
~
+150
5.
Electrical characteristic
s (T
a=25
°C
,
unless other
wise specified)
No
.
Item
Symbol
Unit
V
a
lue
Conditions
1
Forward V
oltage Drop
V
F
V
1.5 max.
I
F
=3.0A
2
Reverse Leakage Current
I
R
uA
50 max.
V
R
=V
RM
3
Reverse
Leakage
Current
Under
High T
em
perature
H
・
I
R
uA
100 max.
V
R
=V
RM
, T
j
=150
°C
4
Reverse Recovery T
ime
trr-1
ns
50 max.
I
F
=I
RP
=500mA
9
0
%
Re
co
v
e
ry
po
in
t,
T
j
=
2
5
°C
trr-2
ns
35 max.
I
F
=500mA, I
RP
=1A
7
5
%
Re
co
v
e
ry
po
in
t
,
T
j
=
2
5
°C
5
Thermal Resistance
R
th(j
-
l)
°C
/W
8.0 max.
Between Junction and Lead
SANKEN ELECTR
IC CO., LTD.
RL4A
0311
10
3
/
5
61426-
01
6.
Characteristics
I
F(A
V)
-
P
F
P
F
(W)
Forward Power Dissipation (W)
I
F(A
V)
(A)
A
verage Forward Current (A)
V
R
-
P
R
P
R
(W)
Reverse Power Dissipation (W)
V
R
(V)
Reverse V
oltage (V)
0
.0
0
0
.0
1
0
.0
2
0
.0
3
0
.0
4
0
.0
5
0
100
200
300
400
500
600
0
.0
1
.0
2
.0
3
.0
4
.0
5
.0
6
.0
0
.0
1
.0
2
.0
3
.0
Tj=150
°C
t
T
t/T=1/6
t/T=1/3,sinewave
t/T=1/2
DC
Tj=150
°C
t
T
1-t/T=5/6
sinewave
1-t/T=2/3
1-t/T=1/2
P1-P3
P4-P5
DSF01S30SC(TPL3)
Mfr. #:
Buy DSF01S30SC(TPL3)
Manufacturer:
Description:
Schottky Diodes & Rectifiers SM Sig Schotky Diode 30V 0.1A Single
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
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EMS
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DSF01S30SC(TPL3)