DESD1LIN2WSQ-7 Datasheet DESD1LIN2WSQ-7 | P1-P3

DESD1LIN2WSQ

Document number: DS37406 Rev. 1 - 2

1 of 5

www.diodes.com

November 2014

DESD1LIN2WSQ

ADVANCE INFO R MA T I O N

ADVANCED I NF ORMATION

LIN-BUS BIDIRECTIONAL TVS DIODE

Product Summary

V

BR (min)

I

PP (max)

C

T (typ)

25.4V & 17.1V

3A

13pF

Description and Applications

This DESD1LIN2WSQ is a next generation ESD and surge protection

device packaged in a small footprint surface mount package. It is

qualified to AECQ101, supported by a PPAP and is designed to

protect one data line of the Local Information Network (LIN) in an

automotive.

 LIN Bus protection

Features and Benefits

 Provides ESD Protection per IEC 61000-4-2 Standard:

Air ±30kV, Contact ±30kV

 1 Channel of ESD Protection

 Low Channel Input Capacitance

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SOD323

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe

(Lead-Free Plating). Solderable per MIL-STD-202, Method 208

 Weight: 0.005 grams (Approximate)

Ordering Information (Note 5)

Product

Compliance

Marking

Reel Size (inches)

Tape Width (mm)

Quantity per Reel

DESD1LIN2WSQ-7

Automotive

A24

7

8

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Device Schematic

Top View

A24 = Product Type Marking Code

e3

SOD323

1

2

L /

L

A24

DESD1LIN2WSQ

Document number: DS37406 Rev. 1 - 2

2 of 5

www.diodes.com

November 2014

DESD1LIN2WSQ

ADVANCE INFO R MA T I O N

ADVANCED I NF ORMATION

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

P

PP

160

W

8/20µs, Per Figure 1

Peak Pulse Current

I

PP

3.0

A

8/20µs, Per Figure 1

ESD Protection – Contact Discharge

V

ESD_Contact

±30

kV

Standard IEC 61000-4-2

ESD Protection – Air Discharge

V

ESD_Air

±30

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 6)

P

D

250

mW

Thermal Resistance, Junction to Ambient (Note 6)

R



JA

500

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-65 to +150

°C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage, from Pin 1 to Pin 2

V

RWM1

-

15

V

-

Reverse Standoff Voltage, from Pin 2 to Pin 1

V

RWM2

-

24

V

-

Channel Leakage Current, from Pin 1 to Pin 2

(Note 7)

I

RM1

-

1

50

nA

V

RWM

= 15V

Channel Leakage Current, from Pin 2 to Pin 1

(Note 7)

I

RM2

-

1

50

nA

V

RWM

= 24V

Breakdown Voltage, from Pin 1 to Pin 2

V

BR1

17.1

18.9

20.3

V

I

R

= 1mA

Breakdown Voltage, from Pin 1 to Pin 1

V

BR2

25.4

27.8

30.3

V

I

R

= 1mA

Clamping Voltage, from Pin 1 to Pin 2

V

CL1

-

-

25

V

I

PP

= 1A, tp = 8/20μS

-

-

35

V

I

PP

= 5A, tp = 8/20μS

Clamping Voltage, from Pin 2 to Pin 1

V

CL2

-

-

40

V

I

PP

= 1A, tp = 8/20μS

-

-

50

V

I

PP

= 3A, tp = 8/20μS

Differential Resistance

R

DIF

-

0.5

-

Ω

I

R

= 1A, tp = 8/20μS

Channel Input Capacitance

C

T

-

13

17

pF

V

R

= 0V, f = 1MHz

Notes: 6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

8040200

t, TIME (µs)

Figure 1 Pulse Waveform

100

50

0

I , PEAK PULSE CURRENT (%I )

PP PP

t = 8µs

r

Peak Value I

PP

Half Value I

PP

/2

8x20 Waveform

as defined by R.E.A.

t

p

-10 0 10 20 30 40 50 60 70 80 90 100

TIME (ns)

Figure 2 ESD Discharge Current Wave Form

IEC 6100-4-2 (330 /150pF)

Rise time = 0.7ns to 1ns

0

20

40

60

80

100

120

27

53

I , DISCHARGE CURRENT (%)

ESD

DESD1LIN2WSQ

Document number: DS37406 Rev. 1 - 2

3 of 5

www.diodes.com

November 2014

DESD1LIN2WSQ

ADVANCE INFO R MA T I O N

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0

50

25 50

75 100 125

150

T , AMBIENT TEMPERATURE (°C)

Figure 3 Power Dissipation vs. Ambient Temperature

A

0

100

25

75

175 200

PEAK PULSE DERATING % OF

PEAK POWER OR CURRENT

1 10 100 1,000

1

10

100

1,000

10,000

t , PULSE DURATION (µs)

P

Figure 4 Peak Pulse Power vs. Pulse Duration

P , PEAK PULSE POWER (W)

PK

Figure 5 Total Capacitance vs. Reverse Voltage

V , DC REVERSE VOLTAGE (V)

R

C , TOTAL CAPACITANCE (pF)

T

0

2

4

6

8

10

12

14

16

18

20

0 5 10 15 20 25

f = 1MHz

DESD1LIN2WSQ-7

DESD1LIN2WSQ-7

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