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VBPW34S

P1-P3P4-P6P7-P8
VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 24-Aug-11
1
Document Number: 81128
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VBPW34S and VBPW34SR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 7.5 mm
2
sensitive area
detecting visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• High speed photo detector
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
21733
VBPW34S
VBPW34SR
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ0.1 (nm)
VBPW34S 55 ± 65 430 to 1100
VBPW34SR 55 ± 65 430 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VBPW34S Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing
VBPW34SR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 8 T
sd
260 °C
Thermal resistance junction/ambient R
thJA
350 K/W
VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 24-Aug-11
2
Document Number: 81128
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
11.3V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
70 pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
25 40 pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
50 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
45 55 μA
Angle of half sensitivity ϕ ± 65 deg
Wavelength of peak sensitivity λ
p
940 nm
Range of spectral bandwidth λ
0.1
430 to 1100 nm
Noise equivalent power V
R
= 10 V, λ = 950 nm NEP 4 x 10
-14
W/√Hz
Rise time
V
R
= 10 V, R
L
= 1 kΩ,
λ = 820 nm
t
r
100 ns
Fall time
V
R
= 10 V, R
L
= 1 kΩ,
λ = 820 nm
t
f
100 ns
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative
Reverse
Light Current
T - Ambient Temperature (°C)
amb
ra rel
VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 24-Aug-11
3
Document Number: 81128
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm
2
)
10
12787
V
R
= 5 V
λ = 950 nm
0.1 1 10
1
10
100
V
R
- Reverse Voltage (V)
100
12788
I
ra
- Reverse Light Current (µA)
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1
100
110
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivit
y
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P6P7-P8

VBPW34S

Mfr. #:
Buy VBPW34S
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes 60V 215mW 65Deg
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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