MMDT3906V-TP

MMDT3906V
PNP
Plastic-Encapsulate
Transistors
Features
Epitaxial Die Construction
Ideal for Low Power Amplification and Switching
Ultra-small Surface Mount Package
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol Rating Rating Unit
V
CEO
Collector-Emitter Voltage -40 V
V
CBO
Collector-Base Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current-Continuous -0.2 A
P
C
Collector Dissipation 0.15 W
R
©
JA
Thermal Resistance Junction to Ambient 833
к
/W
T
J
Operating Junction Temperature -55 to +150
к
T
STG
Storage Temperature -55 to +150
к
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(I
C
=-1mAdc, I
B
=0)
-40 --- --- Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=-10uAdc, I
E
=0)
-40
--- --- Vdc
V
(BR)EBO
Collector-Emitter Breakdown Voltage
(I
E
=-10uAdc, I
C
=0)
-5 --- --- Vdc
I
CEX
Collector Cutoff Current
(V
CE
=-30Vdc,V
EB(OFF)
=-3Vdc)
--- --- 50 nAdc
I
BL
Base Cutoff Current
(V
CE
=-30Vdc,V
EB(OFF)
=-3Vdc)
--- --- 50 nAdc
h
FE
DC Current Gain
(I
C
=-0.1mAdc, V
CE
=-1Vdc)
(I
C
=-1mAdc, V
CE
=-1Vdc)
(I
C
=-10mAdc, V
CE
=-1Vdc)
(I
C
=-50mAdc, V
CE
=-1Vdc)
(I
C
=-100mAdc, V
CE
=-1Vdc)
60
80
100
60
30
---
---
---
---
---
---
---
300
---
---
---
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1mAdc)
(I
C
=-50mAdc, I
B
=-5mAdc)
---
---
---
---
-0.25
-0.4
Vdc
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=-10mAdc, I
B
=-1mAdc)
(I
C
=-50mAdc, I
B
=-5mAdc)
-0.65
---
---
---
-0.85
-0.95
Vdc
omponents
20736 Marilla Street Chatsworth

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$%  !"#
MCC
Revision: B 2013/01/01
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .006 .011 0.15 0.30
B .043 .049 1.10 1.25
C .061 .067 1.55 1.70
D .020 0.50
G .035 .043 0.90 1.10
H .059 .067 1.50 1.70
K .022 .023 0.56 0.60
L .004 .011 0.10 0.30
M .004 .007 0.10 0.18
SOT-563
TM
Micro Commercial Components
x Marking:KAR
www.mccsemi.com
1 of 4
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
f
T
Transition Frequency
(V
CE
=-20Vdc, I
C
=-10mAdc, f=100MHz)
250 --- --- MHz
C
ob
Output Capacitance
(V
CB
=-5Vdc, f=1.0MHz, I
E
=0)
--- --- 4.5 pF
NF
Noise Figure
(V
CE
=-5V,I
C
=-0.1mA, f=1KHz, R
S
=1k¡)
--- --- 4 dB
t
d
Delay Time --- --- 35 ns
t
r
Rise Time
V
CC
=-3V, I
C
=-10mA, V
BE(off)
=0.5V,
I
B1
=-I
B2
=-1mA
--- --- 35 ns
t
S
Storage Time --- --- 225 ns
t
f
Fall Time
V
CC
=-3V, I
C
=-10mA, I
B1
=-I
B2
=-1mA
--- --- 75 ns
Revision: B 2013/01/01
MMDT3906V
MCC
TM
Micro Commercial Components
www.mccsemi.com
2 of 4
MMDT3906V
MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
3 of 4

MMDT3906V-TP

Mfr. #:
Manufacturer:
Micro Commercial Components (MCC)
Description:
Bipolar Transistors - BJT 200mA 40V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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