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BC850AMTF

P1-P3P4-P6
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Publication Order Number:
BC846/D
© 2002 Semiconductor Components Industries, LLC.
September-2017, Rev
. 2
1
BC846 / BC847 / BC848 / BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for Automatic Insertion in Thick and Thin-film Circuits
• Low Noise: BC850
• Complement to BC856, BC857, BC858, BC859, and BC860
Ordering Information
(1)
Note:
1.
A
ffix “-A,-B,-C” means h
FE
classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type
p
acking.
Part Number Marking Package Packing Method
BC846AMTF 8AA SOT-23 3L Tape and Reel
BC846BMTF 8AB SOT-23 3L Tape and Reel
BC846CMTF 8AC SOT-23 3L Tape and Reel
BC847AMTF 8BA SOT-23 3L Tape and Reel
BC847BMTF 8BB SOT-23 3L Tape and Reel
BC847CMTF 8BC SOT-23 3L Tape and Reel
BC848BMTF 8CB SOT-23 3L Tape and Reel
BC848CMTF 8CC SOT-23 3L Tape and Reel
BC850AMTF 8EA SOT-23 3L Tape and Reel
BC850CMTF 8EC SOT-23 3L Tape and Reel
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
www.onsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Note:
2.
PCB s
ize: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage
BC846 80
VBC847 / BC850 50
BC848 30
V
CEO
Collector-Emitter Voltage
BC846 65
VBC847 / BC850 45
BC848 30
V
EBO
Emitter-Base Voltage
BC846 / BC847 6
V
BC848 / BC850 5
I
C
Collector Current (DC) 100 mA
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -65 to +150 °C
Symbol Parameter Value Unit
P
D
Power Dissipation 310 mW
Derate Above 25°C2.48mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 403 °C/W
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Electrical Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3.
Pul
se test: pulse width ≤ 300 μs, duty cycle ≤ 2%
h
FE
Classification
Symbol Parameter Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-Off Current V
CB
= 30 V, I
E
= 0 15 nA
h
FE
DC Current Gain V
CE
= 5 V, I
C
= 2 mA 110 800
V
CE
(sat)
Collector-Emitter Saturation
Voltage
I
C
= 10 mA, I
B
= 0.5 mA 90 250
mV
I
C
= 100 mA, I
B
= 5 mA 200 600
V
BE
(sat) Collector-Base Saturation Voltage
I
C
= 10 mA, I
B
= 0.5 mA 700
mV
I
C
= 100 mA, I
B
= 5 mA 900
V
BE
(on) Base-Emitter On Voltage
V
CE
= 5 V, I
C
= 2 mA 580 660 700
mV
V
CE
= 5 V, I
C
= 10 mA 720
f
T
Current Gain Bandwidth Product
V
CE
= 5 V, I
C
= 10 mA,
f = 100 MHz
300 MHz
C
ob
Output Capacitance V
CB
= 10 V, I
E
= 0, f = 1 MHz 3.5 6.0 pF
C
ib
Input Capacitance V
EB
= 0.5 V, I
C
= 0, f = 1 MHz 9 pF
NF
Noise
Figure
BC846 / BC847 / BC848
V
CE
= 5 V, I
C
= 200 μA,
R
G
= 2 kΩ, f = 1 kHz
2.0 10.0
dB
BC850 1.2 4.0
BC850
V
CE
= 5 V, I
C
= 200 μA,
R
G
= 2 kΩ, f = 30 to 15000 Hz
1.4 3.0
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
www.onsemi.com
3
P1-P3P4-P6

BC850AMTF

Mfr. #:
Buy BC850AMTF
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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