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ES3A-E3/51T

P1-P3P4-P4
ES3A thru ES3D
www.vishay.com
Vishay General Semiconductor
Revision: 14-Mar-12
1
Document Number: 88589
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V to 200 V
I
FSM
100 A
t
rr
20 ns
V
F
0.90 V
T
J
max. 150 °C
DO-214AB (SMC)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ES3A ES3B ES3C ES3D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 V
Maximum RMS voltage V
RMS
35 70 105 140 V
Maximum DC blocking voltage V
DC
50 100 150 200 V
Maximum average forward rectified current at T
L
= 100 °C I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
ES3A thru ES3D
www.vishay.com
Vishay General Semiconductor
Revision: 14-Mar-12
2
Document Number: 88589
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Units mounted on P.C.B. with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES3A ES3B ES3C ES3D UNIT
Maximum instantaneous
forward voltage
3.0 A V
F
(1)
0.90 V
Maximum DC reverse current at
rated DC blocking voltage
T
A
= 25 °C
I
R
10
µA
T
A
= 100 °C 500
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
20 ns
Maximum reverse recovery time
I
F
= 3.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
30
ns
T
J
= 100 °C 50
Maximum stored charge
I
F
= 3.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
15
nC
T
J
= 100 °C 35
Typical junction capacitance 4.0 V, 1 MHz C
J
45 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ES3A ES3B ES3C ES3D UNIT
Typical thermal resistance
R
JA
(1)
47
°C/W
R
JL
(1)
12
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES3D-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
ES3D-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
ES3DHE3/57T
(1)
0.211 57T 850 7" diameter plastic tape and reel
ES3DHE3/9AT
(1)
0.211 9AT 3500 13" diameter plastic tape and reel
0
3.0
80 90 100 110 120 130 140 150
Average Forward Rectified Current (A)
Lead Temperature (°C)
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.31" x 0.31" (8.0 mm x 8.0 mm)
Copper Pad Areas
0
25
50
75
100
125
150
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
8.3 ms Single Half Sine-Wave
at T
L
= 100 °C
ES3A thru ES3D
www.vishay.com
Vishay General Semiconductor
Revision: 14-Mar-12
3
Document Number: 88589
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
1
10
100
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 125 °C
0.1 0.3 0.5 0.7 0.9 1.1 1.3
Instantaneous Forward Voltage (V)
0.1
1
10
100
1000
10 000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0 20406080 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
0.1
20
10
30
40
50
0
1
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
P1-P3P4-P4

ES3A-E3/51T

Mfr. #:
Buy ES3A-E3/51T
Manufacturer:
Vishay
Description:
DIODE GEN PURP 50V 3A DO214AB
Lifecycle:
New from this manufacturer.
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