OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.3 05/10
Page 2 of 3
SMD Silicon Phototransistor
OP520, OP521
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
SMD Silicon Phototransistor
OP520, OP521
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Storage Temperature Range -40° C to +85° C
Operating Temperature Range -25° C to +85° C
Lead Soldering Temperature 260° C
(1)
Collector-Emitter Voltage 30 V
Collector Current 20 mA
Power Dissipation 75 mW
(2)
Emitter-Collector Voltage 5 V
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
4. To Calculate typical collector dark current in µA, use the formula I
CEO
= 10
(0.04Ta-3.4)
where Ta is the ambient temperature in ° C.
Relative Collector Current
Relative On-State Collector
Current vs. Irradiance
0
1.0 2.0 3.0 4.0
Ee—Irradiance (mW/cm
2
)
Relative Collector Current
80%
100%
120%
140%
160%
Relative On-State Collector Current
vs. Temperature
-25 0 25 50 75 100
Temperature—(°C)
-40°C
80°C
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
SYMBOL PARAMETER TYP MAX UNITS CONDITIONS
I
C(ON)
On-State Collector Current mA
V
CE
= 5.0V, E
e
= 5.0mW/cm
2 (3)
V
CE(SAT)
Collector-Emitter Saturation Voltage 0.4 V I
C
= 100µA, E
e
= 5.0mW/cm
2 (3)
I
CEO
Collector-Emitter Dark Current 100 nA V
CE
= 5.0V, E
e
= 0
(4)
V
(BR)CEO
Collector-Emitter Breakdown Voltage V I
C
= 100µA, E
e
= 0
V
(BR)ECO
Emitter-Collector Breakdown Voltage V I
E
= 100µA, E
e
= 0
MIN
0.25
30
5
t
r
, t
f
Rise and Fall Times 15 µs I
C
= 1mA, R
L
= 1KΩ
60%
40%
5.0 6.0 7.0
90%
100%
110%
120%
130%
80%
70%
140%
8.0
20%
Normalized at Ee = 5mW/cm
2
Conditions: V
CE
= 5V,
λ = 935nm, T
A
= 25 °C
Normalized at T
A
= 25°C .
Conditions: V
CE
= 5V,
λ = 935nm, T
A
= 25 °C
