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VEMT2020X01

P1-P3P4-P6P7-P8
VEMT2000X01, VEMT2020X01
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
1
Document Number: 81595
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
VEMT2000X01 series are silicon NPN epitaxial planar
phototransistors with daylight blocking filter in a miniature,
black dome lens package for surface mounting. Filter
bandwidth is matched with 830 nm to 950 nm IR emitters.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• High radiant sensitivity
• Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
• Fast response times
• Angle of half sensitivity: = ± 15°
• Package matched with IR emitter series
VSMB2000X01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
•Counters
•Encoders
• Position sensors
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
21568
VEMT2020X01 VEMT2000X01
PRODUCT SUMMARY
COMPONENT I
ca
(mA) (deg)
0.5
(nm)
VEMT2000X01 6 ± 15 790 to 970
VEMT2020X01 6 ± 15 790 to 970
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMT2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMT2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
20 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
VEMT2000X01, VEMT2020X01
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
2
Document Number: 81595
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Power power dissipation T
amb
75 °C P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow profile fig. 8 T
sd
260 °C
Thermal resistance junction/ambient Acc. J-STD-051 R
thJA
250 K/W
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
0
20
40
60
80
100
120
0 102030405060708090100
21619
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 0.1 mA V
CEO
20 V
Collector dark current V
CE
= 5 V, E = 0 I
CEO
1 100 nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CEO
25 pF
Collector light current
E
e
= 1 mW/cm
2
, = 950 nm,
V
CE
= 5 V
I
ca
369mA
Angle of half sensitivity ± 15 deg
Wavelength of peak sensitivity
p
860 nm
Range of spectral bandwidth
0.5
790 to 970 nm
Collector emitter saturation voltage I
C
= 0.05 mA V
CEsat
0.4 V
Temperature coefficient of I
ca
E
e
= 1 mW/cm
2
, = 950 nm,
V
CE
= 5 V
Tk
Ica
1.1 %/K
VEMT2000X01, VEMT2020X01
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
3
Document Number: 81595
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Rise/Fall Time vs. Collector Current
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 7 - Relative Collector Current vs. Ambient Temperature
1
10
100
1000
10 000
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
I
CE0
- Collector Dark Current (nA)
I
F
= 0
V
CE
= 70 V
V
CE
= 25 V
V
CE
= 5 V
20594
I
ca
- Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
21573
0.01
0.1
1
10
100
0.01 0.1 1 10
V
CE
= 5 V,
λ = 950 nm
0
10
20
30
40
50
60
70
80
90
100
0 250 500 750 1000 1250 1500 1750 2000
I
C
- Collector Current (µA)
t
r
/t
f
- Rise/Fall Time (µs)
t
f
t
r
20599
R
L
= 100 Ω
21574
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
600 650 700 750 800 850 900 950 1000 1050 1100
0
S
rel
- Relative Sensitivity
94 8248
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.20.4
ϕ - Angular Displacement
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
P1-P3P4-P6P7-P8

VEMT2020X01

Mfr. #:
Buy VEMT2020X01
Manufacturer:
Vishay Semiconductors
Description:
Phototransistors NPN Phototransistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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