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ADG774BRQZ

P1-P3P4-P6P7-P9P10-P12P13-P13
–3–
REV. C
ADG774
B Version
1
–40C to –40C to
Parameter +25C +85C +125C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
)4 Ω typ V
D
= 0 V to V
DD
, I
S
= –10 mA
89 Ω max
On Resistance Match between
Channels (R
ON
)0.15 Ω typ V
D
= 0 V to V
DD
, I
S
= –10 mA
0.5 0.5 Ω max
On Resistance Flatness (R
FLAT(ON)
)2 Ω typ V
D
= 0 V to V
DD
, I
S
= –10 mA
44 Ω max
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF) ± 0.01 nA typ V
D
= 3 V, V
S
= 1 V; V
D
= 1 V, V
S
= 3 V;
± 0.5 ± 1 ± 1.5 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ± 0.01 nA typ V
D
= 3 V, V
S
= 1 V; V
D
= 1 V, V
S
= 3 V;
± 0.5 ± 1 ± 1.5 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
D
= V
S
= 3 V; V
D
= V
S
= 1 V; Test Circuit 3
± 0.5 ± 1 ± 1.5 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.001 µA typ V
IN
= V
INL
or V
INH
± 0.5 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
8 ns typ R
L
= 100 Ω, C
L
= 35 pF,
16 21 ns max V
S
= +1.5 V; Test Circuit 4
t
OFF
5 ns typ R
L
= 100 Ω, C
L
= 35 pF,
10 11 ns max V
S
= +1.5 V; Test Circuit 4
Break-Before-Make Time Delay, t
D
5 ns typ R
L
= 100 Ω, C
L
= 35 pF,
1 ns min V
S1
= V
S2
= 3 V; Test Circuit 5
Off Isolation –65 dB typ R
L
= 50 Ω, f = 10 MHz; Test Circuit 7
Channel-to-Channel Crosstalk –75 dB typ R
L
= 50 Ω, f = 10 MHz; Test Circuit 8
Bandwidth –3 dB 240 MHz typ R
L
= 50 Ω; Test Circuit 6
Distortion 2 % typ R
L
= 50 Ω
Charge Injection 3 pC typ C
L
= 1 nF; Test Circuit 9
C
S
(OFF) 10 pF typ f = 1 kHz
C
D
(OFF) 20 pF typ f = 1 kHz
C
D
, C
S
(ON) 30 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= +3.3 V
Digital Inputs = 0 V or V
DD
I
DD
11 µA max
0.001 µA typ
I
IN
11 µA typ V
IN
= +3 V
I
O
100 mA max V
S
/V
D
= 0 V
NOTES
1
Temperature range: B Version, –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 3 V 10%, GND = 0 V. All specifications T
MIN
to T
MAX
unless otherwise noted.)
SINGLE SUPPLY
Table I. Truth Table
EN IN D1 D2 D3 D4 Function
1XHi-Z Hi-Z Hi-Z Hi-Z DISABLE
00S1A S2A S3A S4A IN = 0
01S1B S2B S3B S4B IN = 1
ADG774
–4–
REV. C
ORDERING GUIDE
Model Temperature Range Package Descriptions Package Options
ADG774BR –40°C to +125°C Standard Small Outline Package (SOIC) R-16
ADG774BR-REEL –40°C to +125°C Standard Small Outline Package (SOIC) R-16
ADG774BR-REEL7 –40°C to +125°C Standard Small Outline Package (SOIC) R-16
ADG774BRZ* –40°C to +125°C Standard Small Outline Package (SOIC) R-16
ADG774BRZ-REEL* –40°C to +125°C Standard Small Outline Package (SOIC) R-16
ADG774BRZ-REEL7* –40°C to +125°C Standard Small Outline Package (SOIC) R-16
ADG774BRQ –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16
ADG774BRQ-REEL –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16
ADG774BRQ-REEL7 –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16
ADG774BRQZ* –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16
ADG774BRQZ-REEL* –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16
ADG774BRQZ-REEL7* –40°C to +125°C Shrink Small Outline Package (QSOP) RQ-16
*Z = Pb-free part.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG774 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C unless otherwise noted.)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs
2
. . . . . . . . . . –0.3 V to V
DD
+ 0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 100°C/W
QSOP Package, Power Dissipation . . . . . . . . . . . . . . . 566 mW
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . 149.97°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C
I R Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ADG774
–5–
REV. C
PIN CONFIGURATION
(SOIC/QSOP)
TOP VIEW
(Not to Scale)
1
3
2
4
5
6
7
8
IN
S1A
S1B
D1
S2A
S2B
D2
GND
V
DD
EN
S4A
S4B
D4
S3A
S3B
D3
ADG774
16
14
15
13
12
11
10
9
TERMINOLOGY
V
DD
Most Positive Power Supply Potential.
GND Ground (0 V) Reference.
S Source Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
IN Logic Control Input.
EN Logic Control Input.
R
ON
Ohmic Resistance between D and S.
R
ON
On Resistance Match between any Two Channels, i.e., R
ON
max – R
ON
min.
R
FLAT(ON)
Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over
the specified analog signal range.
I
S
(OFF) Source Leakage Current with the Switch OFF.
I
D
(OFF) Drain Leakage Current with the Switch OFF.
I
D
, I
S
(ON) Channel Leakage Current with the Switch ON.
V
D
(V
S
)Analog Voltage on Terminals D, S.
C
S
(OFF) OFF Switch Source Capacitance.
C
D
(OFF) OFF Switch Drain Capacitance.
C
D
, C
S
(ON) ON Switch Capacitance.
t
ON
Delay between Applying the Digital Control Input and the Output Switching on. See Test Circuit 4.
t
OFF
Delay between Applying the Digital Control Input and the Output Switching Off.
t
D
OFF Time or ON Time Measured between the 90% Points of Both Switches, When Switching from One Address
State to Another. See Test Circuit 5.
Crosstalk A Measure of Unwanted Signal that is Coupled through from One Channel to Another as a Result of Parasitic
Capacitance.
Off Isolation A Measure of Unwanted Signal Coupling through an OFF Switch.
Bandwidth Frequency Response of the Switch in the ON State Measured at 3 dB Down.
Distortion R
FLAT(ON)
/R
L
P1-P3P4-P6P7-P9P10-P12P13-P13

ADG774BRQZ

Mfr. #:
Buy ADG774BRQZ
Manufacturer:
Analog Devices Inc.
Description:
Multiplexer Switch ICs IC 2.2 Ohm Wide BW Quad SPDT
Lifecycle:
New from this manufacturer.
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