46
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION Rev. 00J
03/03/09
IS42S32400B
CLK
CKE
HIGH
ALL BANKS
BANK SELECT
BANK ADDRESS
CS
RAS
CAS
WE
A0-A9, A11
A10
BA0, BA1
DON'T CARE
CLK
CKE
COMMAND
NOP NOP
ACTIVE
t
CKStCKS
All banks idle
Enter
power-down mode
Exit power-down mode
tRCD
tRAS
tRC
Input buffers gated
off
less than 64ms
PRECHARGE Command
POWER-DOWN
POWER-DOWN
Power-down occurs if CKE is registered LOW coincident
with a NOP or COMMAND INHIBIT when no accesses are
in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-
down occurs when there is a row active in either bank, this
mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding
CKE, for maximum power savings while in standby. The
device may not remain in the power-down state longer than
the refresh period (64ms) since no refresh operations are
performed in this mode.
The power-down state is exited by registering a NOP or
COMMAND INHIBIT and CKE HIGH at the desired clock
edge (meeting tCKS). See figure below.
PRECHARGE
The PRECHARGE command (see figure) is used to deac-
tivate the open row in a particular bank or the open row in all
banks. The bank(s) will be available for a subsequent row
access some specified time (tRP) after the PRECHARGE
command is issued. Input A10 determines whether one or
all banks are to be precharged, and in the case where only
one bank is to be precharged, inputs BA0, BA1 select the
bank. When all banks are to be precharged, inputs BA0,
BA1 are treated as “Don’t Care.” Once a bank has been
precharged, it is in the idle state and must be activated prior
to any READ or WRITE commands being issued to that
bank.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
47
PRELIMINARY INFORMATION Rev. 00J
03/03/09
IS42S32400B
POWER-DOWN MODE CYCLE
DON'T CARE
CLK
CKE
COMMAND
DQM0 - DQM3
A0-A9, A11
A10
BA0, BA1
DQ
t
AS
t
AH
BANK
t
CH
t
CL
t
CK
t
CMS
t
CMH
t
CKS
t
CKH
PRECHARGE
NOP NOP NOP
ACTIVE
ALL BANKS
SINGLE BANK
ROW
ROW
BANK
t
CKS
t
CKS
Precharge all
active banks
All banks idle
Two clock cycles
Input buffers gated
off while in
power-down mode
All banks idle, enter
power-down mode
Exit power-down mode
T0 T1 T2 Tn+1 Tn+2
High-Z
Note:
X32: A8, A9, A11 = "Don't Care"
48
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION Rev. 00J
03/03/09
IS42S32400B
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
NOP NOP NOP NOP NOP NOP
DOUT a
DOUT a+1
DOUT b
DOUT b+1
BANK n,
COL a
CAS Latency - 3 (BANK n)
CAS Latency - 3 (BANK m)
tRP - BANK n tRP - BANK m
READ - AP
BANK n
READ - AP
BANK m
Page Active READ with Burst of 4 Interrupt Burst, Precharge Idle
Page Active READ with Burst of 4 Precharge
Internal States
BANK n,
COL b
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQM
DQ
T0 T1 T2 T3 T4 T5 T6 T7
NOP NOP NOP NOP NOP NOP
D
OUT
a
D
IN
b
D
IN
b+1
D
IN
b+2
D
IN
b+3
BANK n,
COL a
BANK m,
COL b
CAS Latency - 3 (BANK n)
t
RP - BANK n
t
DP L - BANK m
READ - AP
BANK n
WRITE - AP
BANK m
READ with Burst of 4 Interrupt Burst, Precharge Idle
Page Active WRITE with Burst of 4 Write-Back
Internal States
Page Active
BURST READ/SINGLE WRITE
The burst read/single write mode is entered by programming
the write burst mode bit
(M9)
in the mode register to a logic 1.
In this mode, all
WRITE
commands result in the access of a
single column location (burst of one), regardless of the
programmed burst length. READ commands access
columns according to the programmed burst length and
sequence, just as in the normal mode of operation (M9 = 0).
CONCURRENT AUTO PRECHARGE
An access command (READ or WRITE) to another bank
while an access command with auto precharge enabled is
executing is not allowed by SDRAMs, unless the SDRAM
supports CONCURRENT AUTO PRECHARGE. ISSI
SDRAMs support CONCURRENT AUTO PRECHARGE.
Four cases where CONCURRENT AUTO PRECHARGE
occurs are defined below.
READ with Auto Precharge
1. Interrupted by a READ (with or without auto precharge):
A READ to bank m will interrupt a READ on bank n, CAS
latency later. The PRECHARGE to bank n will begin
when the READ to bank m is registered.
2. Interrupted by a WRITE (with or without auto precharge):
A WRITE to bank m will interrupt a READ on bank n when
registered. DQM should be used three clocks prior to the
WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to
bank m is registered.
READ With Auto Precharge interrupted by a READ
READ With Auto Precharge interrupted by a WRITE

IS42S32400B-7TL

Mfr. #:
Manufacturer:
ISSI
Description:
DRAM 128M (4Mx32) 143MHz Commercial Temp
Lifecycle:
New from this manufacturer.
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