SI4435DYTR

P1-P3 P4-P6 P7-P8

Si4435DY

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0 10 20 30 40 50 60

0

4

8

12

16

20

Q , Total Gate Char

g

e (nC)

-V , Gate-to-Source Voltage (V)

G

GS

I =

D

-4.6A

V =-15V

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Volta

g

e (V)

-I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

1

10

100

1000

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T

T

= 150 C

= 25 C

°

°

J

A

-V , Drain-to-Source Volta

g

e (V)

-I , Drain Current (A)I , Drain Current (A)

DS

D

100us

1ms

10ms

1 10 100

0

500

1000

1500

2000

2500

3000

3500

-V , Drain-to-Source Volta

g

e (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GS

iss

g

s

g

d , ds

rss

g

d

oss ds

g

d

C

iss

C

oss

C

rss

Si4435DY

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

0.0

2.0

4.0

6.0

8.0

T , Case Temperature ( C)

-I , Drain Current (A)

°

C

D

0.01

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10. Typical Vgs(th) Variance Vs.

Juction Temperature

-50 -25 0 25 50 75 100 125 150

T

J

, Temperature ( °C )

-0.40

-0.30

-0.20

-0.10

0.00

0.10

0.20

-V

GS(th)

, Variace ( V )

Id = -250µA

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Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

2 4 6 8 10 12 14 16

-V

GS,

Gate -to -Source Voltage ( V )

0.00

0.02

0.04

0.06

0.08

0.10

R

DS(on)

, Drain-to -Source Voltage (

Ω

)

Id = -8.0A

0 10 20 30 40

-I

D

, Drain Current ( A )

0.00

0.02

0.04

0.06

0.08

0.10

R

DS

( on) , Drain-to-Source On Resistance (

Ω

)

VGS = -10V

VGS= - 4.5V

P1-P3 P4-P6 P7-P8

SI4435DYTR

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH 30V 8A 8-SOIC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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SI4435DYTR