NTP4302, NTB4302
http://onsemi.com
4
1000
100
10
1
0
100
400
600
700
800
2
4
1
3
0
5
10 10
3000
0
C, CAPACITANCE (pF)
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
1
1000
10
100
1
100
Figure 9. Resistive Switching Time Variations
versus Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage versus Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
D
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
0.1 101 100
010 30
0.5 0.70.6 0.8
15
5
10
0
25
25 1251007550 15
GATE−TO−SOURCE OR DRAIN−TO−SOURCE (VOLTS)
1000
2000
4000
6000
30
I
S
, SOURCE CURRENT (AMPS)
20 20
0.9
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
I
D
= 37 A
T
J
= 25°C
V
GS
V
GS
= 0 VV
DS
= 0 V T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
V
DD
= 24 V
I
D
= 20 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 25°C
I
D
= 17 A
10 ms
1 ms
100 ms
10 ms
dc
t
f
t
d(off)
t
d(on)
t
r
V
DS
Q
2
Q
1
Q
T
1
10
5000
V
DS
20
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10 s max.
200
300
500
V
, DRAIN−TO−SOURCE VOLTAGE (VOLT
30
24
18
12
6
