Product Standards
Transistors with Built-in Resistor
DRC9144V0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
4.7 5.7 -
Input resistance
R1 -30% 47 +30%
k
Resistance ratio
R1/R2 3.7
V
1.9 V
0.25 V
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA
6.3
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
0.2 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA 30 -
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0
0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0
50 V
Parameter
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
°C
Max Unit
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0 50 V
Tstg -55 to +150
Junction temperature Tj 150 °C
Total power dissipation PT
125
mW
Collector current IC
100
mA
Collector-emitter voltage (Base open) VCEO
50
V
Collector-base voltage (Emitter open) VCBO
50
V
Internal Connection
Resistance
value
R1
47
k
R2
10
k
1of3
Unit: mm
Min Typ
SC-89
Collector
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRC9144V0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA9144V
DRC5144V in SSMini3 type package
Features
Marking Symbol:
NJ
Code
Base
Emitter
SOT-490
Panasonic
Packaging
SSMini3-F3-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Symbol Conditions
Storage temperature
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
C
B
R
1
R
2
E
