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VB30100SG-E3/4W

P1-P3P4-P6
V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
1
Document Number: 88996
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.437 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
RRM
100 V
I
FSM
250 A
V
F
at I
F
= 30 A 0.76 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation Single die
V30100SG VF30100SG
VI30100SGVB30100SG
PIN 1
PIN 2
PIN 3
K
1
2
3
1
K
2
3
TO-220AB
TO-263AB
NC
A
K
HEATSINK
NC
A
K
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
TO-262AA
TMBS
®
ITO-220AB
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30100SG VF30100SG VB30100SG VI30100SG UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1) I
F(AV)
30 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
250 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 90 mH E
AS
230 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C
I
RRM
1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
2
Document Number: 88996
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 10 mA T
A
= 25 °C V
BR
100 (minimum) - V
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.50 -
V
I
F
= 10 A 0.60 -
I
F
= 30 A 0.92 1.00
I
F
= 5 A
T
A
= 125 °C
0.44 -
I
F
= 10 A 0.55 -
I
F
= 30 A 0.76 0.83
Reverse current
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
8.8 - µA
T
A
= 125 °C 6.5 - mA
V
R
= 100 V
T
A
= 25 °C 43 350 µA
T
A
= 125 °C 35 35 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30100SG VF30100SG VB30100SG VI30100SG UNIT
Typical thermal resistance R
JC
2.0302.02.0°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V30100SG-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VF30100SG-E3/4W 1.74 4W 50/tube Tube
TO-263AB VB30100SG-E3/4W 1.37 4W 50/tube Tube
TO-263AB VB30100SG-E3/8W 1.37 8W 800/reel Tape and reel
TO-262AA VI30100SG-E3/4W 1.45 4W 50/tube Tube
Case Temperature (°C)
Average Forward Current (A)
25
30
35
20
15
10
5
0
0 25 50 75 100 125 150
V(B,I)30100SG
VF30100SG
Resistive or Inductive Load
0
4
8
12
16
20
24
28
32
048 12 16 20 24 28 32 36
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
3
Document Number: 88996
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Typical Transient Thermal Impedance
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70
80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
100
1000
10 000
0.1 1 10 100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
V(I)30100SG
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
VF30100SG
P1-P3P4-P6

VB30100SG-E3/4W

Mfr. #:
Buy VB30100SG-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 30 Amp 100 Volt Single TrenchMOS
Lifecycle:
New from this manufacturer.
Delivery:
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