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BYV72EW-200,127

P1-P3P4-P6P7-P9P10-P11
NXP Semiconductors
BYV72EW-200
Dual ultrafast power diode
BYV72EW-200 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 24 July 2013 3 / 10
Symbol Parameter Conditions Min Max Unit
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode; Fig. 4
- 170 AI
FSM
non-repetitive peak forward
current
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode; Fig. 4
- 185 A
I
RRM
repetitive peak reverse current δ = 0.001 ; t
p
= 2 µs; per diode - 0.2 A
I
RSM
non-repetitive peak reverse
current
t
p
= 100 µs; per diode - 0.2 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
Electrostatic discharge
V
ESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ - 8 kV
I
F(AV)
(A)
0 252010 155
003aal041
10
15
5
20
25
P
tot
(W)
0
δ
= 1
0.5
0.2
0.1
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; per
diode; maximum values
I
F(AV)
(A)
0 15105
003aal042
5
10
15
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4.0
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
per diode; maximum values
NXP Semiconductors
BYV72EW-200
Dual ultrafast power diode
BYV72EW-200 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 24 July 2013 4 / 10
T
mb
(°C)
-50 20015050 1000
003aal043
10
5
15
20
I
F(AV)
(A)
0
113 °C
Fig. 3. Average forward current as a function of
mounting base temperature; per diode;
maximum values
t
p
(s)
10
-5
10
-2
10
-3
10
-4
003aal044
10
3
10
2
10
4
I
FSM
(A)
10
t
p
T
j(init)
= 25 °C max
I
F
I
FSM
t
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
per diode; maximum values
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
with heatsink compound; per diode;
Fig. 5
- - 2.4 K/WR
th(j-mb)
thermal resistance
from junction to
mounting base
with heatsink compound; both diodes
conducting
- - 1.4 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 45 - K/W
NXP Semiconductors
BYV72EW-200
Dual ultrafast power diode
BYV72EW-200 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 24 July 2013 5 / 10
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse width; per diode;
maximum values
10. Characteristics
Table 7. Characteristics
characteristics are per diode unless otherwise stated
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
F
= 15 A; T
j
= 25 °C; Fig. 6 - 0.95 1.05 V
I
F
= 30 A; T
j
= 25 °C; Fig. 6 - 1 1.2 V
V
F
forward voltage
I
F
= 15 A; T
j
= 150 °C; Fig. 6 - 0.78 0.9 V
V
R
= 200 V; T
j
= 25 °C - 10 100 µAI
R
reverse current
V
R
= 200 V; T
j
= 100 °C - 0.5 1 mA
Dynamic characteristics
Q
r
recovered charge I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/µs;
T
j
= 25 °C; Fig. 7
- 6 15 nC
t
rr
reverse recovery time I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; Fig. 7
- 20 28 ns
V
FRM
forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 10 A/µs; T
j
= 25 °C;
Fig. 8
- 1 - V
P1-P3P4-P6P7-P9P10-P11

BYV72EW-200,127

Mfr. #:
Buy BYV72EW-200,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Dual ultrafast power diode
Lifecycle:
New from this manufacturer.
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