STP265N6F6AG

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

Electrical characteristics

STP265N6F6AG

4/13

DocID027281 Rev 3

2 Electrical characteristics

(T

CASE

= 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain

-

source breakdown

voltage

I

D

= 250 μA,

V

GS

= 0 V

60

V

I

DSS

Zero gate voltage drain

current

V

DS

= 60 V,

V

GS

= 0 V

1

μA

V

DS

= 60 V,

T

C

=125 °C

(1)

V

GS

= 0 V

100

μA

I

GSS

Gate

-body leakage

current

V

GS

= ± 20 V,

V

DS

= 0 V

± 100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

,

I

D

= 250 μA

2

4

V

R

DS(on)

Static drain

-

source on-

resistance

V

GS

= 10 V,

I

D

= 60 A

2.3

2.85

mΩ

Notes:

(1)

Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 25 V,

f = 1 MHz,

V

GS

= 0 V

-

11800

-

pF

C

oss

Output capacitance

-

1235

-

pF

C

rss

Reverse transfer

capacitance

-

488

-

pF

Q

g

Total gate charge

V

DD

= 30 V,

I

D

= 120 A,

V

GS

= 10 V

(see Figure 14: "Test circuit for

gate charge behavior")

-

183

-

nC

Q

gs

Gate-source charge

-

53

-

nC

Q

gd

Gate

-drain charge

-

41

-

nC

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 30 V,

I

D

= 60 A

R

G

= 4.7 Ω,

V

GS

= 10 V

(see Figure 13: "Test circuit for

resistive load switching times"

and

Figure 18:

"Switching time

waveform")

-

31

-

ns

t

r

Rise time

-

165

-

ns

t

d(off)

Turn-off-delay time

-

144

-

ns

t

f

Fall time

-

63

-

ns

STP265N6F6AG

Electrical characteristics

DocID027281 Rev 3

5/13

Table 7: Source drain diode

Symbol

Parameter Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

180

A

I

SDM

(1)

Source

-drain current

(pulsed)

720

A

V

SD

(2)

Forward on voltage

I

SD

= 180 A,

V

GS

= 0 V

1.1

V

t

rr

Reverse recovery time

I

SD

= 120 A,

V

DD

= 48 V

di/dt = 100 A/μs,

T

j

= 150 °C

(see Figure 15: "Test circuit for

inductive load switching and

diode recovery times")

-

56

-

ns

Q

rr

Reverse recovery charge

-

116

-

nC

I

RRM

Reverse recovery current

-

3.8

-

A

Notes:

(1)

Pulse width limited by safe operating area.

(2)

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Electrical characteristics

STP265N6F6AG

6/13

DocID027281 Rev 3

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area

Figure 3: Thermal impedance

Figure 4: Output characteristics

Figure 5: Transfer characteristics

Figure 6: Normalized V

(BR)DSS

vs. temperature

Figure 7: Static drain-source on-resistance

10

-5

10

-4

10

-3

10

-2

10

-1

t

p

(s)

10

-2

10

-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-c

ᵟ

=tp/W

tp

W

Single pulse

ᵟ

=0.5

280tok

-75

T

J

(°C)

(norm)

-25

75

25

125

0.6

0.7

0.8

0.9

1.0

1.1

175

I

D

=1mA

AM09071v1

V

(BR)DSS

RDS(on)

2.0

020 60

ID(A)

40

(mΩ)

1.8

80

2.2

2.4

V

GS= 10V

2.6

100

GIPD101220141320FS

R

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

STP265N6F6AG

Mfr. #:

Buy STP265N6F6AG

Manufacturer:

STMicroelectronics

Description:

MOSFET Automotive-grade N-channel 60 V, 2.3 mOhm typ., 180 A STripFET F6 Power MOSFET in TO-220 package

Lifecycle:

New from this manufacturer.

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STP265N6F6AG