Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IRFZ46ZSTRLPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRFZ46Z/S/LPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-
to-
Source V
olt
age (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
5
10
15
20
25
30
35
Q
G
Tot
al G
ate Char
ge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
V
DS
= 28V
V
DS
= 11V
I
D
= 31A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
SD
, S
ource-t
o-Dr
ain V
olt
age (V)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rain-
to-
Source V
olt
age (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
Tc =
25°C
Tj
= 175°
C
Si
ngle P
ulse
IRFZ46Z/S/LPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Temper
ature (
°C)
0
5
10
15
20
25
30
35
40
45
50
55
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60
-40
-20
0
20
40
60
80
100
120
140 160
180
T
J
, Junct
ion T
emperat
ure (°
C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 31A
V
GS
= 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
1
, R
ectangul
ar Pul
se Durat
ion (
sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1
/t2
2. P
eak Tj
= P
dm x Zthj
c + T
c
Ri (°C/W)
τ
i (sec)
0.9322 0.000357
0.5533 0.001133
0.3545 0.004091
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
IRFZ46Z/S/LPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
1K
VC
C
DUT
0
L
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion T
emperat
ure (°
C)
0
50
100
150
200
250
300
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 3.5A
5.0A
BO
TTOM
3
1A
-75
-50
-25
0
25
50
75
100
125
150
175
200
T
J
, T
emperat
ure ( °
C )
1.0
2.0
3.0
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
P10-P12
IRFZ46ZSTRLPBF
Mfr. #:
Buy IRFZ46ZSTRLPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 51A 13.6mOhm 31nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IRFZ46ZSTRLPBF
IRFZ46ZPBF
IRFZ46ZLPBF
IRFZ46ZSPBF