UMZ8NTR Datasheet EMZ8T2R, UMZ8NTR | P1-P3

EMZ8 / UMZ8N

Transistors

Rev.C 1/4

Power management (dual transistors)

EMZ8 / UMZ8N

zFeature

1) Both a 2SA2018 chip and 2SC2412K chip in a EMT

or UMT package.

zDimensions(Unit : mm)

zEquivalent circuits

(3) (2) (1)

Tr

1

Tr

2

(4) (5) (6)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Limits

−15

60

Tr1

Tr2

Unit

V

−12

50

V

−6

7

−500

150

V

mA

A

−55 to +150 °C

150

°C

V

CBO

V

CEO

V

EBO

I

C

I

CP

150 (TOTAL)

∗

mWP

C

Tj

Tstg

∗

120mW per element must not be exceeded.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

−1 −

zPackage, marking, and packaging specifications

Part No. UMZ8N

UMT6

Z8

TR

3000

EMZ8

EMT6

Z8

T2R

8000

Package

Marking

Code

Basic ordering unit (pieces)

ROHM : EMT6

EIAJ :

ROHM : UMT6

UMZ8N

EMZ8

EIAJ : SC-88

Each lead has same dimensions

(6) (5) (4)

(1) (2) (3)

(6) (5)(4)

(1) (2)(3)

EMZ8 / UMZ8N

Transistors

Rev.C 2/4

zElectrical characteristics (Ta=25°C)

Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

BV

CEO

−12

−6

−

270

−

−0.1

−

−0.1

−0.25

680

V

µA

V

−

IC

=

−1mA

BV

CBO

−15 −−

V

IC

=

−10µA

IE

=

−10µA

VCB

=

−15V

VEB

=

−6V

IC/IB

=

−200mA/−10mA

VCE

=

−2V , IC = −10mA

f

T

Cob

−

260

6.5

−

MHz

pF

VCE

=

−2V , IE

=

10mA

,

f =

100MHz

VCB

=

−10V

,

IE

=

0A

,

f

=

1MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Tr2

Parameter

Symbol Min. Typ. Max. Unit Conditions

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

BV

CEO

50

7

−

120

−

0.1

0.4

560

V

µA

V

−

I

C

=

1mA

BV

CBO

60

−−

V I

C

=

50µA

I

E

=

50µA

V

CB

=

60V

V

EB

=

7V

I

C

/I

B

=

50mA/5mA

V

CE

=

6V

,

I

C

=

1mA

f

T

Cob

−

180

2

−

3.5

MHz

pF

V

CE

=

12V

,

I

E

=

−2mA

,

f

=

100MHz

V

CB

=

12V

,

I

E

=

0A

,

f

=

1MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

z

Electrical characteristic curves

<Tr1>

1

2

5

10

20

50

100

200

500

1000

0 0.5 1.0 1.5

BASE TO EMITTER VOLTAGE : V

BE

(V)

COLLECTOR CURRENT : I

C

(mA)

V

CE

=2V

Fig.1 Grounded Emitter Propagation

Characteristics

Ta= −40°C

Ta=25°C

Ta=125°C

0

20

40

60

80

100

120

140

160

180

200

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Fig.2 Typical Output Characteristics

Ta=25

pulsed

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

COLLECTOR CURRENT : I

C

(mA)

I

B

=700µA

I

B

=600µA

I

B

=500µA

I

B

=400µA

I

B

=300µA

I

B

=200µA

I

B

=100µA

I

B

=0µA

°C

1

2

5

10

20

50

100

200

500

1000

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT : I

C

(mA)

DC CURRENT GAIN : h

FE

V

CE

=2V

Fig.3 DC Current Gain vs.

Collector Current

Ta= −40°C

Ta=25°C

Ta=125°C

1

2

5

10

20

50

100

200

500

1000

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT : I

C

(mA)

I

C

/ I

B

=20

Ta= −40°C

Ta=25°C

Ta=125°C

COLLECTOR SATURATION

VOLTAGE : V

CE (sat)

(V)

Fig.4 Collector-Emitter Saturation

Voltage vs.

Collector Current (Ι)

1

2

5

10

20

50

100

200

500

1000

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT : I

C

(mA)

Ta=25°C

I

C

/ I

B

=50

I

C

/ I

B

=20

I

C

/ I

B

=10

Fig.5 Collector-Emitter Saturation

Voltage vs.

Collector Current (ΙΙ)

COLLECTOR SATURATION

VOLTAGE : V

CE (sat)

(mV)

10

20

50

100

200

500

1000

2000

5000

10000

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT : I

C

(mA)

I

C

/ I

B

=20

Ta=125°C

Ta=25°C

Ta= −40°C

BASER SATURATION VOLTAGE : V

BE (sat)

(mV)

Fig.6 Base-Emitter Saturation

Voltage vs.Collecter Current

EMZ8 / UMZ8N

Transistors

Rev.C 3/4

1

2

5

10

20

50

100

200

500

1000

1 2 5 10 20 50 100 200 500 1000

EMITTER CURRENT : I

C

(mA)

TRANSITION FREQUENCY : f

T

(MHz)

V

CE

=2V

Ta=25°C

Fig.7 Gain Bandwidth Product vs.

Emitter Current

1

2

5

10

20

50

100

200

500

1000

0.1 0.2 0.5 1 2 5 10 20 50 100

EMITTER TO BASE VOLTAGE : V

EB

(V)

I

E

=0A

f=1MHz

Ta=25°C

Fig.8 Collector Output Capacitance vs.

Collector-Base Voltage

Emitter Input Capacitance vs.

Emitter-Base Voltage

Cib

Cob

EMITTER INPUT CAPACITANCE :

Cib (pF)

COLLECTOR OUTPUT CAPACITANCE :

Cob (pF)

<Tr2>

Fig.1 Grounded emitter propagation

characteristics

0

0.1

0.2

0.5

2

20

50

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

1

5

10

Ta

=

100°C

V

CE

=6V

COLLECTOR CURRENT : I

C

(mA)

BASE TO EMITTER VOLTAGE : V

BE

(V)

25°C

−55°C

Fig.2 Grounded emitter output

characteristics ( Ι )

0

20

40

60

80

100

0.4 0.8 1.2 1.6 2.00

COLLECTOR CURRENT : IC (mA)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

0.05mA

0.10mA

0.15mA

0.25mA

0.30mA

0.35mA

0.20mA

Ta=25°C

IB=0A

0.40mA

0.50mA

0.45mA

0

2

8

10

4 8 12 16

4

6

20

I

B

=0A

Ta=25°C

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

3µA

6µA

9µA

12µA

15µA

18µA

21µA

24µA

27µA

30µA

Fig.3 Grounded emitter output

characteristics ( ΙΙ )

0.2

20

10

0.5 1 2 5 10 20 50 100 200

50

100

200

500

VCE=5V

3V

1V

Ta=25°C

Fig.4 DC current gain vs.

collector current ( Ι )

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

0.2 0.5 1 2 5 10 20 50 100 200

20

10

50

100

200

500

25°C

−55°C

Ta=100°C

V

CE

=

5V

Fig.5 DC current gain vs.

collector current ( ΙΙ )

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig. 6 Collector-emitter saturation

voltage vs. collector current

0.2

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

I

C

/I

B

=50

20

10

Ta=25°C

UMZ8NTR

UMZ8NTR

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