SP8K2FU6TB Datasheet SP8K2FU6TB, SP8K2TB | P1-P3

SP8K2

Transistors

1/3

Switching (30V, 6.0A)

SP8K2

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

zApplication

Power switching, DC / DC converter.

zStructure

Silicon N-channel

MOS FET

zExternal dimensions (Unit : mm)

Each lead has same dimensions

SOP8

5.0±0.2

0.2±0.1

6.0±0.3

3.9±0.15

0.5±0.1

(

1

)

(

4

)

(

8

)

(

5

)

Max.1.75

1.27

0.15

0.4±0.1

1.5±0.1

0.1

zAbsolute maximum ratings (Ta=25°C)

It is the same ratings for the Tr. 1 and Tr. 2.

Parameter

VV

DSS

Symbol

VV

GSS

AI

D

AI

DP

AI

S

AI

SP

WP

D

°CTch

°CTstg

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Storage temperature

Continuous

Pulsed

Continuous

Source current

(Body diode)

Pulsed

30

20

±6.0

±24

1.6

6.4

2

150

−55 to +150

Limits

∗1

∗2

∗1 Pw 10µs, Duty cycle 1%

∗2 MOUNTED ON A CERAMIC BOARD.

zEquivalent circuit

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(1) (2) (3) (4)

(8) (7) (6) (5)

∗2

∗1

∗2

∗1

(8) (7)

(1) (2)

(6) (5)

(3) (4)

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

zThermal resistance (Ta=25°C)

°C / W

Rth (ch-a) 62.5

Parameter

Symbol Limits Unit

Channel to ambient

∗

∗MOUNTED ON A CERAMIC BOARD.

SP8K2

Transistors

2/3

zElectrical characteristics (Ta=25°C)

It is the same characteristics for the Tr. 1 and Tr. 2.

Parameter Symbol

I

GSS

Y

fs

Min.

−

Typ. Max.

Unit

Conditions

Gate-source leakage

V

(BR) DSS

Drain-source breakdown voltage

I

DSS

Zero gate voltage drain current

V

GS (th)

Gate threshold voltage

Static drain-source on-state

resistance

R

DS (on)

Forward transfer admittance

Input capacitance

Output capacitance

C

iss

Reverse transfer capacitance

C

oss

Turn-on delay time

C

rss

Rise time

t

d (on)

Turn-off delay time

t

r

Fall time

t

d (off)

Total gate charge

t

f

Gate-source charge

Q

g

Gate-drain charge

Q

gs

Q

gd

∗Pulsed

∗

− 10 µAV

GS

=20V, V

DS

=0V

V

DD

15V

30 −−VI

D

=1mA, V

GS

=0V

−−1 µAV

DS

=30V, V

GS

=0V

1.0 − 2.5 V V

DS

=10V, I

D

=1mA

− 21 30 I

D

=6.0A, V

GS

=10V

− 30 42 mΩ I

D

=6.0A, V

GS

=4.5V

− 33 47 I

D

=6.0A, V

GS

=4V

4.0 −−SI

D

=6.0A, V

DS

=10V

− 520 − pF V

DS

=10V

− 150

95

− pF V

GS

=0V

−

9

− pF f=1MHz

V

GS

=10V

R

L

=5Ω

R

GS

=10Ω

−

21

− ns

−

36

− ns

−

13

− ns

−

7.2

− ns

−

1.8

10.1 nC

−

2.8

− nC V

GS

=5V

−−nC I

D

=6.0A

I

D

=3A, V

DD

15V

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

It is the same characteristics for the Tr. 1 and Tr. 2.

Forward voltage

V

SD

−−1.2 V I

S

=6.4A, V

GS

=0V

Parameter Symbol

Min. Typ. Max.

Unit

Conditions

∗Pulsed

∗

SP8K2

Transistors

3/3

zElectrical characteristic curves

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : V

DS

(V)

10

CAPACITANCE : C

(pF)

1000

10000

100

Ta=25°C

f=1MHz

V

GS

=0V

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

C

iss

C

oss

C

rss

0.01 0.1 1 10

DRAIN CURRENT : I

D

(A)

1

10

100

1000

DRAIN CURRENT : I

D

(A)

SWITCHING TIME : t

(ns)

Ta=25°C

V

DD

=15V

V

GS

=10V

R

G

=10Ω

Pulsed

Fig.2 Switching Characteristics

t

r

t

f

t

d (off)

t

d (on)

02468101214

TOTAL GATE CHARGE : Qg

(nC)

0

1

2

3

4

5

6

7

8

9

10

GATE-SOURCE VOLTAGE : V

GS

(V)

Ta=25°C

V

DD

=15V

I

D

=6A

R

G

=10Ω

Pulsed

Fig.3

Dynamic Input Characteristics

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

0.001

0.01

0.1

1

10

GATE-SOURCE VOLTAGE : V

GS

(V)

DRAIN CURRENT : I

D

(A)

Fig.4

Typical Transfer Characteristics

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

V

DS

=10V

Pulsed

0246810121416

GATE-SOURCE VOLTAGE : V

GS

(V)

0

50

100

150

200

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Ta=25°C

Pulsed

I

D

=6A

I

D

=3A

0.01

0.1

1

10

0.0 0.5 1.0 1.5

SOURCE-DRAIN VOLTAGE : V

SD

(V)

SOURCE CURRENT : I

s

(A)

Fig.6 Source Current vs.

Source-Drain Voltage

V

GS

=0V

Pulsed

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.1 1 10

DRAIN CURRENT : I

D

(A)

1

10

100

1000

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current (Ι)

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

V

GS

=10V

Pulsed

0.1 1 10

1

10

100

1000

DRAIN CURRENT : I

D

(A)

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

V

GS

=4.5V

Pulsed

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current (ΙΙ)

0.1 1 10

1

10

100

1000

V

GS

=4V

Pulsed

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

DRAIN CURRENT : I

D

(A)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current (ΙΙΙ)

SP8K2FU6TB

SP8K2FU6TB

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