Product Standards
Transistors with Built-in Resistor
DRA5123Y0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
mW
Collector current IC -100 mA
Collector-emitter voltage (Base open) VCEO -50
+85 °COperating ambient temperature
Storage temperature
Junction temperature Tj 150 °C
-0.5
V
°C
0.22 0.27 -
V
Resistance ratio R1/R2 0.17
V
-0.25 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-1.1
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA
-1.0 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 30 -
Emitter-base cutoff current (Collector open)
IEBO VEB = -6 V, IC = 0
-0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = -50 V, IB = 0 -0.5 μA
Collector-base cutoff current (Emitter open)
ICBO VCB = -50 V, IE = 0
V
Parameter
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -50
Symbol Conditions
Tstg -55 to
Total power dissipation PT 150
+150
-40 toTopr
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Unit: mm
SC-85
Collector
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRA5123Y0L
Silicon PNP epitaxial planar type
For digital circuits
DRA2123Y in SMini3 type package
Features
Marking Symbol:
L3
Code
Base
Emitter
―
Panasonic
Packaging
SMini3-F2-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Input resistance R1 -30% 2.2 +30%
k
R1 2.2
k
R2 10
k
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
C
B
R
1
R
2
E
