RN2707JE~RN2709JE
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2707JE, RN2708JE, RN2709JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
• A wide range of resistor values are available for use in various circuit
designs.
• Complementary to RN1707JE to RN1709JE
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage
RN2707JE
to 2709JE
V
CEO
−50 V
RN2707JE −6
RN2708JE −7
Emitter-base voltage
RN2709JE
V
EBO
−15
V
Collector current I
C
−100 mA
Collector power dissipation P
C
(Note 1) 100 mW
Junction temperature T
j
150 °C
Storage temperature range
RN2707JE
to 2709JE
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Unit: mm
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC ―
JEITA ―
TOSHIBA 2-2P1D
Weight: 3 mg (typ.)
Equivalent Circuit
(top view)
5 4
1 2 3
Q2Q1
Type No. R1 (kΩ) R2 (kΩ)
RN2707JE 10 47
RN2708JE 22 47
RN2709JE 47 22
R1
R2
B
C
E
Start of commercial production
2000-06
