PMP4501V_G_Y_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 28 August 2009 3 of 14
NXP Semiconductors
PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 5. Marking codes
Type number Marking code
[1]
PMP4501V EB
PMP4501G R6*
PMP4501Y S8*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT666
[1][2]
- 200 mW
SOT353
[1]
- 200 mW
SOT363
[1]
- 200 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT666
[1][2]
- 300 mW
SOT353
[1]
- 300 mW
SOT363
[1]
- 300 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
