APT1001RBN

V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
TO-247AD Package Outline
050-0008 Rev B
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2-Plcs.
0 .5 1.0 1.5 2.0
0 10 20 30 40 50
1 5 10 50 100 1000
0 40 80 120 160 200
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
60
10
1
.1
10,000
1,000
100
10
100
50
20
10
5
2
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
10µS
1mS
10mS
100mS
DC
100µS
APT901RBN
APT1001RBN
C
iss
C
oss
C
rss
T
J
= +150°C T
J
= +25°C
V
DS
=200V
V
DS
=100V
V
DS
=500V
APT1001RBN
I
D
= I
D
[Cont.]

APT1001RBN

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
MOSFET N-CH 1000V 11A TO247AD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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