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MRFE6P9220HR3

P1-P3P4-P6P7-P9P10-P12
MRFE6P9220HR3
7
Freescale Semiconductor
RF Product Device Data
TYPICAL CHARACTERISTICS
500
14
24
0
75
P
out
, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1600 mA
f = 880 MHz
10010
22
20
16
60
45
30
η
D
, DRAIN EFFICIENCY (%)
G
ps
η
D
G
ps
, POWER GAIN (dB)
1
T
C
= −30_C
85_C
25_C
−30_C
25_C
85_C
Figure 8. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 24 V
G
ps
, POWER GAIN (dB)
400
14.5
20.5
50
19.5
15.5
200
16.5
17.5
I
DQ
= 1600 mA
f = 880 MHz
32 V
0
18.5
100 150 250 300 350
28 V
Figure 9. MTTF Factor versus Junction Temperature
18
15
250
10
8
90
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 47 W Avg., and η
D
= 30%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
10
7
10
6
10
5
110 130 150 170 190
MTTF (HOURS)
210 230
8
Freescale Semiconductor
RF Product Device Data
MRFE6P9220HR3
N- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 10. Single- Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2468
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
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.
−60
−110
−10
(dB)
−20
−30
−40
−50
−70
−80
−90
−100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7 2.2
1.5
0−0.7
−1.5
−2.2
−2.9
−3.6
3.6
f, FREQUENCY (MHz)
Figure 11. Single-Carrier N- CDMA Spectrum
−ACPR in 30 kHz
Integrated BW
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
MRFE6P9220HR3
9
Freescale Semiconductor
RF Product Device Data
f
MHz
Z
source
Ω
Z
load
Ω
850
865
880
3.50 - j7.10
3.03 - j6.98
3.59 - j7.07
6.04 - j0.49
6.83 - j1.14
7.41 - j1.19
V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 47 W Avg.
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
−
−+
+
Figure 12. Series Equivalent Source and Load Impedance
Z
o
= 10 Ω
Z
load
Z
source
895
910 2.26 - j5.39
2.42 - j6.20 7.60 - j0.98
8.06 - j0.45
f = 910 MHz
f = 850 MHz
f = 850 MHz
f = 910 MHz
P1-P3P4-P6P7-P9P10-P12

MRFE6P9220HR3

Mfr. #:
Buy MRFE6P9220HR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6E 900MHZ 200W NI860ML
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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