2004 Feb 03 3
NXP Semiconductors Product data sheet
Low V
F
(MEGA) Schottky barrier diode
PMEG2015EA
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Notes
1. Refer to SC-76 (SOD323) standard mounting conditions.
2. Device mounted on a printed-circuit board with copper clad 10 x 10 mm.
3. Soldering point of cathode tab.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
continuous forward voltage see Fig.2; note 1
I
F
= 10 mA 240 270 mV
I
F
= 100 mA 300 350 mV
I
F
= 1 000 mA 480 550 mV
I
F
= 1 500 mA 560 660 mV
I
R
continuous reverse current see Fig.3; note 1
V
R
= 5 V 5 10 μA
V
R
= 8 V 7 20 μA
V
R
= 15 V 10 50 μA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz;
see
Fig.4
19 25 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 450 K/W
note 2 210 K/W
R
th(j-s)
thermal resistance from junction to solder point note 3 90 K/W
