EGP10A-TP

EGP10A
THRU
EGP10K
1.0 Amp Glass
Passivated High
Efficient Rectifiers
50 to 800 Volts
Features
Glass passivated cavity-free junction.
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Typical Thermal Resistance: 50
O
C/W Junction to Ambient
MCC
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
EGP10A 50V 35V 50V
EGP10B 100V 70V 100V
EGP10D 200V 140V 200V
EGP10F 300V 210V 300V
EGP10G 400V 280V 400V
EGP10J 600V 420V 600V
EGP10K 800V 560V 800V
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
1.0 A T
A
= 55
O
C
Peak Forward Surge
Current
I
FSM
30A
8.3ms, half
sine
Maximum
Instantaneous Forward
Voltage
EGP10A-10D
EGP10F-10G
EGP10J-10K
V
F
1.00V
1.25V
1.70V
I
F
=1.0A
T
A
=25
O
C
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
I
R
5.0uA
100uA
T
A
= 25
O
C
T
A
= 125
O
C
Maximum Reverse
Recovery Time
EGP10A-10G
EGP10J-10K
t
rr
50nS
75nS
I
F
=0.5A,
I
R
=1.0A,
I
RR
=0.25A
T
J
=25
O
C
Typical Junction
Capacitance
EGP10A-10D
EGP10F-10K
C
J
22pF
15pF
Measured at
1.0MHz,
V
R
=4.0V
DO-41
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .166 .205 4.10 5.20
B .080 .107 2.00 2.70
C .028 .034 .70 .90
D 1.000 --- 25.40 ---
A
B
C
D
D
Cathode
Mark
omponents
20736 Marilla Street Chatsworth

 !"#
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MCC
Revision: 7 2008/01/30
TM
Micro Commercial Components
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL rating 1
x Marking : Cathode band and type number
www.mccsemi.com
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Lead Free Finish/RoHS Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Maximum Ratings
Average Forward Rectified Current - Amperes versus
Ambient Temperature -
O
C
Figure 2
Forward Derating Curve
0
17550 75 100 125
0
.2
.4
.6
Amps
O
C
150
.8
1.0
1.2
Resistive or Inductive Load
0.375”(9.5mm) Lead Length
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 1
Typical For ward Characteristics
4
6
20
10
Amps
.4 .6 .8
1.0 1.2
1.4
.01
.02
.04
.06
.1
.2
.4
.6
1
2
25
O
C
Volts
150
O
C
EGP10A -EGP10D
EGP10F-EGP10K
Junction Capacitance - pF versus
Reverse Voltage - Volts
Figure 3
Junction Capacitance
.1 .2
1
.4 2 10 20 404 100 200
1
2
6
10
20
100
pF
Volts
60
40
4
400 1000
T
J
=25
O
C
EGP10A -EGP10D
EGP10F
-
EGP10K
MCC
EGP10A thru EGP10K
Revision: 7 2008/01/30
TM
Micro Commercial Components
www.mccsemi.com
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t
rr
+0.5A
0
-0.25
-1.0
1cm
Set Time Base for 20/100ns/c
m
25Vdc
1Ω
50Ω 10Ω
Oscilloscope
Note 1
Pulse
Generator
Note 2
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
Figure 5
Reverse Recovery Time Characteristic And Test Circuit Diagram
1 1004
0
10
20
30
8
Figure 4
Peak Forward Surge Current
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
A
m
p
s
C
y
cles
2
6
10 20 60 8040
40
50
60
EGP10A thru EGP10K
MCC
Revision: 7 2008/01/30
TM
Micro Commercial Components
www.mccsemi.com
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EGP10A-TP

Mfr. #:
Manufacturer:
Description:
DIODE GEN PURP 50V 1A DO41
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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