OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TSD30H120CW MNG

P1-P3P4-P5
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" menas green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
V
RRM
V
dV/dt V/μs
TYP MAX TYP MAX TYP MAX TYP MAX
T
J
= 25°C
0.69 0.78 0.75 0.84 0.81 0.90 0.84 0.92
T
J
= 125°C
0.61 0.68 0.64 0.73 0.68 0.77 0.70 0.79
T
J
= 25°C
- 250 - 250 - 150 - 150 μA
T
J
= 125°C
10 35 10 35 3 20 3 20 mA
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D1411019 Version: C15
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
Instantaneous forward
voltage per diode (Note1)
Operating junction temperature range
Storage temperature range
per diode
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
Voltage rate of change (Rated V
R
)
UNIT
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
TSD30H
120CW
Maximum repetitive peak reverse voltage 100 120
2.8
Maximum average
forward rectified current
per device
I
F(AV)
Taiwan Semiconductor
30A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TSD30H
150CW
- Halogen-free according to IEC 61249-2-21
TYPICAL APPLICATIONS
MECHANICAL DATA
Case: TO-263AB (D
2
PAK)
Polarity: As marked
A
V
I
F
= 15A
PARAMETER SYMBOL
TSD30H
100CW
A
TSD30H
200CW
150 200
30
Trench Schottky barrier rectifier is designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
TO-263AB (D
2
PAK)
TSD30H100CW - TSD30H200CW
- 55 to +150
- 55 to +150
15
200
10000
V
F
I
R
1
3
2
Document Number: DS_D1411019 Version: C15
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO. PACKING CODE
PACKING CODE
SUFFIX
PACKAGE PACKING
DESCRIPTION
TSD30HXXXCW
(Note 1)
C0 G
D
2
PAK
50 / Tube
Note 1: "XXX" defines voltage from 100V (TSD30H100CW) to 200V (TSD30H200CW)
TSD30H120CW C0G TSD30H120CW C0 G Green compound
EXAMPLE
PREFERRED
PART NO.
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
0
5
10
15
20
25
30
35
0 255075100125150
FIG. 1 FORWARD CURRENT DERATING CURVE
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
CASE TEMPERATURE (
°
C)
AVERAGE FORWARD CURRENT (A)
TSD30H100CW
TSD30H120CW
TSD30H150CW
TSD30H200CW
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
TSD30H100CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
TSD30H150CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
TSD30H120CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
Document Number: DS_D1411019 Version: C15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
TSD30H150CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
10
100
1000
10000
0.1 1 10 100
FIG. 10 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
TSD30H200CW
TSD30H150CW
TSD30H100CW
TSD30H120CW
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
TSD30H200CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (mA)
TST30H120CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
INSTANTANEOUS REVERSE CURRENT (mA)
TSD30H120CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
TSD30H100CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT
(mA)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
TSD30H200CW
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
T
J
=150
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
P1-P3P4-P5

TSD30H120CW MNG

Mfr. #:
Buy TSD30H120CW MNG
Manufacturer:
Taiwan Semiconductor
Description:
Schottky Diodes & Rectifiers 30A 120V Trench Schottky
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet