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SIA427DJ-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 66711
S12-1141-Rev. C, 21-May-12
Vishay Siliconix
SiA427DJ
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
=25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
0.2
0.3
0.4
0.5
0.6
0.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 μA
V
GS(th)
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
0.01
0.02
0.03
0.04
0.05
0.06
012345
I
D
= 8.2 A; T
J
= 125 °C
I
D
=8.2A;T
J
= 25 °C
I
D
= 1 A; T
J
= 125 °C
I
D
= 1 A; T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
1
0.1 1 10
0.01
10
0.1
T
A
= 25 °C
Single Pulse
100 ms
DC
100
1ms
10 s
1s
10 ms
100 μs
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
BVDSS Limited
Limited by R *
DS(on)
Document Number: 66711
S12-1141-Rev. C, 21-May-12
www.vishay.com
5
Vishay Siliconix
SiA427DJ
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating
0
5
10
15
20
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 66711
S12-1141-Rev. C, 21-May-12
Vishay Siliconix
SiA427DJ
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66711
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80 C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-4
1
0.1
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
0.05
10
-1
P1-P3P4-P6P7-P9

SIA427DJ-T1-GE3

Mfr. #:
Buy SIA427DJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 8V 12A 19W 13mohms @ 4.5V
Lifecycle:
New from this manufacturer.
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