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2N7002W-7

P1-P3P4-P4
2N7002W
Document number: DS30099 Rev. 14 - 2
1 of 4
www.diodes.com
September 2013
© Diodes Incorporated
2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low-On Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Notes 4)
Part Number Case Packaging
2N7002W-7-F SOT-323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-323
TOP VIEW
E
q
uivalent Circuit
TOP VIEW
Source
Gate
Drain
GS
D
K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
K72
YM
Chengdu A/T Site
Shanghai A/T Site
2N7002W
Document number: DS30099 Rev. 14 - 2
2 of 4
www.diodes.com
September 2013
© Diodes Incorporated
2N7002W
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
1.0M V
DGR
60 V
Gain-Source Voltage Continuous
Pulsed
V
GSS
20
40
V
Drain Current (Note 5) Continuous
Continuous @ +100C
Pulsed
I
D
115
73
800
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Derating above T
A
= +25°C
P
D
200
1.60
mW
mW
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 70
V
V
GS
= 0V, I
D
= 10A
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
1.0
500
A
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
10
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
1.0
2.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
j
= +125°C
R
DS(ON)

1.8
2.6
7.5
13.5
Ω
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D
(
ON
)
0.5 1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
mS
V
DS
= 10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
22 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
11 25 pF
Reverse Transfer Capacitance
C
rss
2.0 5.0 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
t
D
(
ON
)
7.0 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω,V
GEN
= 10V,
R
GEN
= 25Ω
Turn-Off Delay Time
t
D(OFF)
11 20 ns
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
2N7002W
Document number: DS30099 Rev. 14 - 2
3 of 4
www.diodes.com
September 2013
© Diodes Incorporated
2N7002W
Package Outline Dimensions
0
0.2
0.4
0.6
0.8
1.0
012
3
45
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
R
, N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
0.0
0.5
1.0
2.5
2.0
1.5
3.5
3.0
-55 -30
-5
20 45 70 95 120 145 170
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
J
°
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 1012141618
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18

0° 8°
All Dimensions in mm
A
M
J
L
D
F
B
C
H
K
G
TOP VIEW
P1-P3P4-P4

2N7002W-7

Mfr. #:
Buy 2N7002W-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V 200mW
Lifecycle:
New from this manufacturer.
Delivery:
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