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SI2301CDS-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68741
S10-2430-Rev. C, 25-Oct-10
Vishay Siliconix
Si2301CDS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
10
T
J
= - 50 °C
T
J
= 150 °C
T
J
= 25 °C
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
=1mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.15
0.30
0.45
0.60
012345
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V )
T
J
=25 °C
T
J
= 125 °C
I
D
=2.8 A
0
2
4
6
8
10
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
T
A
= 25 °C
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)I
D
10
0.1
0.1 1 10
1
T
A
= 25 °C
Single Pulse
1ms
10 ms
100 ms
0.01
100 s, DC
BVDSS Limited
100
Limited byR
DS(on)
*
1s
10 s
100 µs
Document Number: 68741
S10-2430-Rev. C, 25-Oct-10
www.vishay.com
5
Vishay Siliconix
Si2301CDS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68741
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJF
=50 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E
1
1
3
2
S
e
e
1
D
A
2
A
A
1
C
Seating Plane
0.10 mm
0.004"
C
C
L
1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim
MILLIMETERS INCHES
Min Max Min Max
A 0.89 1.12 0.035 0.044
A
1
0.01 0.10 0.0004 0.004
A
2
0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E
1
1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e
1
1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L
1
0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
P1-P3P4-P6P7-P9

SI2301CDS-T1-GE3

Mfr. #:
Buy SI2301CDS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 8V Vgs SOT-23
Lifecycle:
New from this manufacturer.
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