V
RRM
= 20 V - 100 V
I
F
= 300 A
Features
• High Surge Capability Three Tower Package
• Types up to 100 V V
RRM
• Isolation Type Package
Parameter Symbol MBRT30020 (R) MBRT30030 (R) Unit
Re
etitive
eak reverse volta
e
V
RRM
20 30 V
Silicon Power
Schottk
Diode
MBRT30020 thru MBRT30040R
MBRT30040 (R)
35
MBRT30035 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
40
RMS reverse voltage
V
RMS
14 21 V
DC blocking voltage
V
DC
20 30 V
Continuous forward current
I
F
300 300 A
Operating temperature
T
j
-40 to 150 -40 to 150 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBRT30020 (R) MBRT30030(R) Unit
Diode forward voltage 0.75 0.75
11
20 20
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.16 0.16 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
20
A2500
V
R
= 20 V, T
j
= 25 °C
I
F
= 150 A, T
j
= 25 °C
T
C
≤ 125 °C
Conditions
25
2500 2500
-40 to 175
300 300
2500
-40 to 175
MBRT30040 (R)
11
MBRT30035 (R)
0.16
V
R
= 20 V, T
j
= 125 °C
0.16
0.75 0.75
20
mA
V
-40 to 150 -40 to 150
C
= 25 °C, t
p
= 8.3 m
28
4035
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