IXFT320N10T2 Datasheet IXFT320N10T2 | P1-P3

DS100237A(5/12)

IXFH320N10T2

IXFT320N10T2

TrenchT2

TM

HiperFET

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 100 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 100 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C (Chip Capability) 320 A

I

LRMS

Lead Current Limit, RMS 160 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

800 A

I

A

T

C

= 25°C 160 A

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 175°C 15 V/ns

P

D

T

C

= 25°C 1000 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062in.) from Case for 10s 300 °C

T

sold

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 100 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.0 4.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 150°C 1.75 mA

R

DS(on)

V

GS

= 10V, I

D

= 100A, Notes 1 & 2 3.5 mΩ

V

DSS

= 100V

I

D25

= 320A

R

DS(on)

≤≤

≤

3.5m

ΩΩ

Ω

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

TO-268 (IXFT)

G

S

D (Tab)

S

G

D (Tab)

D

Features

z

International Standard Packages

z

High Current Handling Capability

z

Fast Intrinsic Diode

z

Avalanche Rated

z

Fast Intrinsic Diode

z

Low R

DS(on)

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

Synchronous Recification

z

DC-DC Converters

z

Battery Chargers

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

AC Motor Drives

z

Uninterruptible Power Supplies

z

High Speed Power Switching

Applications

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH320N10T2

IXFT320N10T2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Includes lead resistance.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 80 130 S

C

iss

26 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 2250 pF

C

rss

450 pF

R

Gi

Gate Input Resistance 1.48 Ω

t

d(on)

36 ns

t

r

46 ns

t

d(off)

73 ns

t

f

177 ns

Q

g(on)

430 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

110 nC

Q

gd

125 nC

R

thJC

0.15 °C/W

R

thCH

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 320 A

I

SM

Repetitive, Pulse Width Limited by T

JM

1200 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.2 V

t

rr

98 ns

I

RM

6.6

A

Q

RM

320 nC

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 100A

R

G

= 1Ω (External)

I

F

= 150A, V

GS

= 0V

-di/dt = 100A/μs

V

R

= 50V

e

∅ P

TO-247 (IXFH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-268 (IXFT) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source 4 - Drain

IXFH320N10T2

IXFT320N10T2

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

280

320

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

7V

5V

6V

4V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

50

100

150

200

250

300

350

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

7V

5

V

6

V

4

V

Fig. 4. R

DS(on)

Normalized to I

D

= 160A Value

vs. Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 320A

I

D

= 160A

Fig. 5. R

DS(on)

Normalized to I

D

= 160A

vs. Drain Current

0.8

1.2

1.6

2.0

2.4

2.8

3.2

0 50 100 150 200 250 300 350 400

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current limit

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

400

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

7V

4V

5V

6V

IXFT320N10T2

IXFT320N10T2

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