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VS-UFB130FA40

P1-P3P4-P6
VS-UFB130FA40
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
1
Document Number: 93602
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Ultrafast Rectifier Module, 130 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
J
max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-UFB130FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery current
shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
PRIMARY CHARACTERISTICS
V
R
400 V
I
F(AV)
per module at T
C
= 114 °C 130 A
t
rr
40 ns
Type Modules - Diode FRED Pt
®
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
400 V
Continuous forward current per diode I
F
T
C
= 123 °C 65
A
Single pulse forward current per diode I
FSM
T
C
= 25 °C 800
Maximum power dissipation per module P
D
T
C
= 123 °C 144 W
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500 V
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
VS-UFB130FA40
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
2
Document Number: 93602
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 400 - -
V
Forward voltage V
FM
I
F
= 60 A - 1.16 1.37
I
F
= 60 A, T
J
= 175 °C - 0.93 1.09
Reverse leakage current I
RM
V
R
= V
R
rated - - 50 μA
T
J
= 175 °C, V
R
= V
R
rated - - 1 mA
Junction capacitance C
T
V
R
= 400 V - 67 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 40 -
nsT
J
= 25 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-86 -
T
J
= 125 °C - 155 -
Peak recovery current I
RRM
T
J
= 25 °C - 8.4 -
A
T
J
= 125 °C - 18.4 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 350 -
nC
T
J
= 125 °C - 1400 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 0.72
°C/WJunction to case, both leg conducting - - 0.36
Case to heatsink R
thCS
Flat, greased surface - 0.10 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
1
10
100
1000
0 0.5 1 1.5 2 2.5
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
T
J
= 175 °C
T
J
= 25 °C
0.001
0.01
0.1
1
10
100
1000
0 50 100 150 200
T
J
= 175 °C
T
J
= 25 °C
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
VS-UFB130FA40
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
3
Document Number: 93602
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
100
1 10 100 1000
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
Z
thJC
- Thermal Impedance (°C/W)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
t
1
- Rectangular Pulse Duration (s)
DC
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
I
F(AV)
- Average Forward Current (A)
0
25
50
75
100
125
150
175
0 20 40 60 80 100 120 140 160
Allowable Case Temperature (°C)
DC
Square wave (D = 0.50)
Rated V
R
applied
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
25
50
75
100
125
150
0 10 20 30 40 50 60 70 80 90 100 110 120
DC
RMS limit
D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50
P1-P3P4-P6

VS-UFB130FA40

Mfr. #:
Buy VS-UFB130FA40
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 130 Amp 400 Volt
Lifecycle:
New from this manufacturer.
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