DMV1500MFD5

DMV1500M
4/8
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 6: Non repetitive peak forward current
versus overload duration (damper diode)
Figure 7: Non repetitive peak forward current
versus overload duration (modulation diode)
Figure 8: Reverse recovery charges versus
dI
F
/dt (damper diode)
Figure 9: Reverse recovery charges versus
dI
F
/dt (modulation diode)
Figure 10: Peak reverse recovery current
versus dI
F
/dt (damper diode)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Z/R
th(j-c) th(j-c)
t (s)
p
DAMPER diode
MODULATION diode
Single pulse
0
5
10
15
20
25
30
35
40
1.E-03 1.E-02 1.E-01 1.E+00
I (A)
M
T =25°C
C
T =75°C
C
T =125°C
C
t(s)
I
M
t
δ
=0.5
0
5
10
15
20
25
30
1.E-03 1.E-02 1.E-01 1.E+00
I (A)
M
T =25°C
C
T =75°C
C
T =125°C
C
t(s)
I
M
t
δ
=0.5
0
100
200
300
400
500
600
700
800
900
1000
0.1 1.0 10.0
Q (nC)
rr
dI /dt(A/µs)
F
I=
T =125°C
90% confidence
F
j
I
P
0
50
100
150
200
0.1 1.0 10.0 100.0
Q (nC)
rr
dI /dt(A/µs)
F
I=
T =125°C
90% confidence
F
j
I
P
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1.0 10.0
I (A)
RM
dI /dt(A/µs)
F
I=
T =125°C
90% confidence
F
j
I
P
DMV1500M
5/8
Figure 11: Peak reverse recovery current
versus dI
F
/dt (modulation diode)
Figure 12: Transient peak forward voltage
versus dI
F
/dt (damper diode)
Figure 13: Transient peak forward voltage
versus dI
F
/dt (modulation diode)
Figure 14: Forward recovery time versus dI
F
/dt
(damper diode)
Figure 15: Forward recovery time versus dI
F
/dt
(modulation diode)
Figure 16: Relative variation of dynamic
parameters versus junction temperature
0.0
1.0
2.0
3.0
4.0
5.0
6.0
1 10 100 1000
I (A)
RM
dI /dt(A/µs)
F
I=
T =125°C
90% confidence
F
j
I
P
0
5
10
15
20
25
30
35
40
0 20 40 60 80 100 120 140
V (V)
FP
dI /dt(A/µs)
F
I=
T =125°C
90% confidence
F
j
I
P
0
1
2
3
4
5
6
7
8
9
10
11
12
0 20 40 60 80 100 120 140 160 180 200
V (V)
FP
dI /dt(A/µs)
F
I=
T =125°C
90% confidence
F
j
I
P
400
450
500
550
600
650
700
750
800
0 20 40 60 80 100 120 140
t (ns)
fr
I=
T =125°C
V
90% confidence
F
j
I
=3V
P
FR
dI /dt(A/µs)
F
0
25
50
75
100
125
150
175
200
0 20 40 60 80 100 120 140 160 180 200
t (ns)
fr
I=
T =125°C
V
90% confidence
F
j
I
=2V
P
FR
dI /dt(A/µs)
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25 50 75 100 125
Q
RR
T (°C)
j
V
FP
I
RM
I,V,Q [T]/
RM FP RR j
I , V , Q [T =125°C]
RM FP RR j
DMV1500M
6/8
Figure 18: TO-220FPAB Package Mechanical Data
Figure 17: Junction capacitance versus
reverse voltage applied (typical values)
1
10
100
1 10 100 1000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
DAMPER diode or MODULATION diode
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.9 0.173 0.192
B 2.5 2.9 0.098 0.114
D 2.45 2.75 0.096 0.108
E 0.4 0.7 0.016 0.027
F 0.6 1 0.024 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.7 0.393 0.421
L2 16 Typ. 0.630 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.7 0.385 0.421
L6 15.8 16.4 0.622 0.646
L7 9 9.9 0.354 0.390
Dia. 2.9 3.5 0.114 0.138

DMV1500MFD5

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
DIODE STANDAR 1500V TO220FPAB F5
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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