CDNBS16-T03~T36C – TVS Diode Array Series
Features
■ Lead free device (RoHS Compliant*)
■ Protects 8 lines
■ Unidirectional & bidirectional
configurations
■ ESD protection
Applications
■ Audio/video inputs
■ RS-232, RS-422 & RS-423 data lines
■ Portable electronics
■ Medical sensors
General Information
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in 16 Lead Narrow Body SOIC package size format. The
Transient Voltage Suppressor Array series offer a choice of voltage types ranging
from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns
®
Chip
Diodes conform to JEDEC standards, are easy to handle on standard pick and place
equipment and their flat configuration minimizes roll away.
The Bourns
®
device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements.
Parameter Symbol Max. Unit
Operating Temperature TJ -55 to +150 °C
Storage Temperature TSTG -55 to +150 °C
Notes:
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
3. Only applies to unidirectional devices.
4. Part numbers with a “C” suffix are bidirectional devices, i.e., CDNBS16-T03C.
Parameter Symbol
CDNBS16-
Unit
Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi-
T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C
Minimum Breakdown Voltage
@ 1 mA
VBR 4.5 6.0 8.5 13.3 16.7 26.7 40.0 V
Working Peak Voltage VWM 3.0 5.0 8.0 12.0 15.0 24.0 36.0 V
Maximum Clamping Voltage
V
C
@ I
P
= 1 A
1
VC 8.0 9.8 13.4 19.0 25.5 40.0 53.0 V
Maximum Clamping Voltage
@ 8/20 µs V
C
@ I
PP
1
VC
23 V
@ 43 A
24 V
@ 42 A
26 V
@ 30 A
33 V
@ 21 A
39 V
@ 15 A
57 V
@ 10 A
72 V
@ 7 A
V
Maximum Leakage Current
@ V
WM
ID 125 20 10 2 2 2 2 µA
Maximum Capacitance
@ 0 V, 1 MHz
Cj(SD)
15 pF
Temperature Coefficient
of V
BR
-3 3 9 16 17 26 36 mV/°C
Peak Pulse Power
(tp = 8/20 µs)
2
PPP 500 W
Forward Voltage @ 100 mA,
300 µs – Square Wave
3
VF 1.5 V
