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NTDV18N06LT4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2016
November, 2018 − Rev. 8
1 Publication Order Number:
NTD18N06L/D
NTD18N06L, NTDV18N06L
Power MOSFET
18 A, 60 V, Logic Level N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• AEC Q101 Qualified − NTDV18N06L
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
v10 ms)
V
GS
V
GS
±15
±20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
18
10
54
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
55
0.36
2.1
W
W/°C
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc,
L = 1.0 mH, I
L
(pk) = 12 A, V
DS
= 60 Vdc)
E
AS
72 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
2.73
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
N−Channel
D
S
G
60 V
54 mW@5.0 V
R
DS(on)
TYP
18 A
(Note 1)
I
D
MAX
V
(BR)DSS
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
A = Assembly Location*
18N6L = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
1
2
3
4
AYWW
18
N6LG
www.onsemi.com
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD18N06L, NTDV18N06L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
70
57.6
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.8
5.2
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 9.0 Adc)
R
DS(on)
− 54 65
mW
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 18 Adc)
(V
GS
= 5.0 Vdc, I
D
= 9.0 Adc, T
J
= 150°C)
V
DS(on)
−
−
1.0
0.86
1.3
−
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 9.0 Adc) g
FS
− 13.5 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 482 675 pF
Output Capacitance C
oss
− 166 230
Transfer Capacitance C
rss
− 56 80
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 18 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1 W) (Note 3)
t
d(on)
− 9.9 20 ns
Rise Time t
r
− 79 160
Turn−Off Delay Time t
d(off)
− 19 40
Fall Time t
f
− 38 80
Gate Charge
(V
DS
= 48 Vdc, I
D
= 18 Adc,
V
GS
= 5.0 Vdc) (Note 3)
Q
T
− 11 22 nC
Q
1
− 3.2 −
Q
2
− 6.5 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 18 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 18 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
0.94
0.83
1.15
−
Vdc
Reverse Recovery Time
(I
S
= 18 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 41 −
ns
t
a
− 26 −
t
b
− 15 −
Reverse Recovery Stored Charge Q
RR
− 0.057 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
†
NTD18N06LT4G DPAK
(Pb−Free)
2500 / Tape & Reel
NTDV18N06LT4G DPAK
(Pb−Free)
2500 / Tape & Reel
STD18N06LT4G−VF01 DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD18N06L, NTDV18N06L
www.onsemi.com
3
0
0.06
3020
0.04
0.02
0
10
0.1
0.12
4
0
0.08
2
1.6
1.2
1.4
1
0.8
0.6
1
1000
10000
04
20
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.06
3020
0.04
0.02
0
10
Figure 3. On−Resistance versus
Gate−to−Source Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
40
−50 50250−25 75 125100
1.6 2.4 5
.6
0403020 6
0
10
3
10
30
8 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
T
J
= 100°C
V
GS
= 5 V
V
GS
= 10 V
150 175
V
GS
= 0 V
I
D
= 9 A
V
GS
= 5 V
0.1
0.12
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
40
T
J
= 150°C
T
J
= 100°C
20
0
40
10
30
3.2 4
T
J
= 25°C
T
J
= −55°C
50
100
6 V
5 V
4.5 V
4 V
3.5 V
3 V
1.8
5.5 V
4.8
0.08
10
P1-P3P4-P6P7-P7

NTDV18N06LT4G

Mfr. #:
Buy NTDV18N06LT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 60V 18A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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