IRFR6215TRL

P1-P3 P4-P6 P7-P9 P10-P11

IRFR/U6215

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

4

8

12

16

20

0 20406080

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Char

g

e

(

nC

)

FOR TEST CIRCUIT

SEE FIGURE 13

I = -6.6A

V = -120V

V = -75V

V = -30V

D

DS

DS

DS

0.1

1

10

100

0.2 0.6 1.0 1.4 1.8

T = 25°C

J

V = 0V

GS

SD

SD

A

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

T = 175°C

J

1

10

100

1 10 100 1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10ms

A

-I , Drain Current (A)

-V , Drain-to-Source Volta

g

e

(

V

)

DS

D

10µs

100µs

1ms

T = 25°C

T = 175°C

Sin

g

le Pulse

C

J

0

400

800

1200

1600

2000

1 10 100

C, Capacitance (pF)

A

DS

-V , Drain-to-Source Volta

g

e

(

V

)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

IRFR/U6215

www.irf.com 5

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

V

DS

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

25 50 75 100 125 150 175

0

2

4

6

8

10

12

14

T , Case Temperature ( C)

-I , Drain Current (A)

°

C

D

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PU LSE

(THERMAL RESPONSE)

A

Thermal Response (Z )

P

t

2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1

2

J

DM

thJC

C

IRFR/U6215

6 www.irf.com

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

0

200

400

600

800

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Startin

g

T , Junction Temperature

(

°C

)

I

TOP -2.7A

-4.7A

BOTTOM -6.6A

D

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Q

G

Q

GS

Q

GD

V

G

Charge

-10V

D.U.T.

V

DS

I

D

I

G

-3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(

BR

)

DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

V

DD

DRIVER

A

15V

-20V

P1-P3 P4-P6 P7-P9 P10-P11

IRFR6215TRL

Mfr. #:

Buy IRFR6215TRL

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH 150V 13A DPAK

Lifecycle:

New from this manufacturer.

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