RN1110,RN1111
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1110, RN1111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
• With built-in bias resistors
• Simplified circuit design
• Reduced number of parts and simplified manufacturing process
• Complementary to RN2110 and RN2111
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage V
CEO
50 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
100 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC ―
JEITA ―
TOSHIBA 2-2H1A
Weight: 2.4mg (typ.)
Unit: mm
SSM
Start of commercial production
1990-12
