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AON6786_001

P1-P3P4-P6P7-P7
AON6786
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 20 40 60 80
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
1000
2000
3000
4000
5000
6000
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θ
JC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
R
θJC
=1.5°C/W
Rev1 : June 2011 www.aosmd.com Page 4 of 7
AON6786
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θ
JA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
20
40
60
80
100
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
20
40
60
80
100
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
R
θJA
=50°C/W
1
10
100
1000
1 10 100 1000
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
I
AR
(A) Peak Avalanche Current
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
Rev1 : June 2011 www.aosmd.com Page 5 of 7
AON6786
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 50 100 150 200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
I
R
(A)
V
DS
=15V
V
DS
=30V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 50 100 150 200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
V
SD
(V)
I
S
=1A
10A
20A
5A
5
10
15
20
25
30
0 5 10 15 20 25 30
I
S
(A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Q
rr
(nC)
0
2
4
6
8
10
12
I
rm
(A)
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
Q
rr
I
rm
0
5
10
15
20
25
30
0 200 400 600 800 1000
di/dt (A/µ
µµ
µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Q
rr
(nC)
0
5
10
15
20
I
rm
(A)
125ºC
125ºC
25ºC
25ºC
I
s
=20A
Q
rr
I
rm
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30
I
S
(A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
t
rr
(ns)
0
0.5
1
1.5
2
2.5
3
3.5
4
S
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
t
rr
S
0
3
6
9
12
15
18
21
0 200 400 600 800 1000
di/dt (A/µ
µµ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
t
rr
(ns)
0
0.5
1
1.5
2
2.5
3
3.5
4
S
125ºC
25ºC
25ºC
125º
I
s
=20A
t
rr
S
Rev1 : June 2011 www.aosmd.com Page 6 of 7
P1-P3P4-P6P7-P7

AON6786_001

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MOSFET N-CH 30V 24A DFN
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